Si3590DV
New Product
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
FEATURES
r
DS(on)
(W)
I
D
(A)
3
2
-2
-1.2
0.077 @ V
GS
= 4.5 V
0.120 @ V
GS
= 2.5 V
0.170 @ V
GS
= -4.5 V
D
TrenchFETr Power MOSFET
D
Ultra Low r
DS(on)
N- and P-Channel for High
Efficiency
D
Optimized for High-Side/Low-Side
D
Minimized Conduction Losses
P-Channel
-30
0.300 @ V
GS
= -2.5 V
APPLICATIONS
D
Portable Devices Including PDAs, Cellular
Phones and Pagers
D
1
S
2
TSOP-6
Top View
G1
1
6
D1
G
2
3 mm
S2
2
5
S1
G
1
G2
3
4
D2
2.85 mm
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
1.05
1.15
0.70
P-Channel
10 secs
Steady State
-30
"12
V
-1.7
-1.3
-8
A
-0.75
0.83
0.53
W
_C
Symbol
V
DS
V
GS
10 secs
Steady State
30
"12
Unit
3
2.3
8
2.5
2.0
-2
-1.6
0.75
0.83
0.53
-55 to 150
-1.05
1.15
0.70
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
P-Channel
Typ
93
130
75
Symbol
Typ
93
130
75
Max
110
150
90
Max
110
150
90
Unit
_C/W
C/W
1
Si3590DV
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"12
V
"
V
DS
= 24 V, V
GS
= 0 V
V
DS
= -24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
a
V
DS
w
5 V, V
GS
= 4.5 V
I
D(on)
V
DS
p
-5 V, V
GS
= -4.5 V
V
GS
= 4.5 V, I
D
= 3 A
Drain-Source On-State Resistance
a
V
GS
= -4.5 V, I
D
= -2 A
r
DS(on)
V
GS
= 2.5 V, I
D
= 2 A
V
GS
= -2.5 V, I
D
= -1.2 A
Forward Transconductance
a
V
DS
= 5 V, I
D
= 3 A
g
fs
V
DS
= -5 V, I
D
= -2 A
I
S
= 1.05 A, V
GS
= 0 V
V
SD
I
S
= -1.05 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
-5
0.062
0.135
0.095
0.235
10
5
0.80
-0.83
1.10
-1.10
V
S
0.077
0.170
0.120
0.300
W
A
0.6
-0.6
1.5
V
-1.5
"100
"100
1
-1
5
-5
mA
m
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 2 A
Gate-Source Charge
Q
gs
P-Channel
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= -15 V, R
L
= 15
W
I
D
^
-1 A, V
GEN
= -10 V, R
G
= 6
W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse Recovery Time
t
f
I
F
= 1.05 A, di/dt = 100 A/ms
t
rr
I
F
= -1.05 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
3
3.8
0.6
nC
0.6
1.0
1.5
5
5
12
15
13
20
7
20
15
18
8
8
23
23
23
30
12
30
25
30
ns
4.5
6
Gate-Drain Charge
Q
gd
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
Si3590DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
7
I
D
- Drain Current (A)
6
5
4
3
2
1
1.5 V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2V
V
GS
= 5 thru 2.5 V
I
D
- Drain Current (A)
8
7
6
5
4
3
T
C
= 125_C
2
1
25_C
-55
_C
Vishay Siliconix
N−CHANNEL
Transfer Characteristics
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
450
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.4
C - Capacitance (pF)
360
C
iss
270
0.3
0.2
V
GS
= 2.5 V
0.1
V
GS
= 4.5 V
0.0
0
2
4
6
8
10
180
90
C
rss
0
6
C
oss
0
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 2 A
1.8
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 3 A
4
r
DS(on)
- On-Resistance (
W)
(Normalized)
2
3
4
5
5
1.6
1.4
3
1.2
2
1.0
1
0.8
0
0
1
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
www.vishay.com
3
Si3590DV
Vishay Siliconix
New Product
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.25
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
r DS(on)- On-Resistance (
W
)
0.20
I
D
= 3 A
0.15
I
S
- Source Current (A)
T
J
= 150_C
1
0.10
T
J
= 25_C
0.05
0.1
0.00
0.3
0.6
0.9
1.2
1.5
0.00
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
V
GS(th)
Variance (V)
6
8
Single Pulse Power, Junction-to-Ambient
-0.0
Power (W)
4
-0.2
2
-0.4
-0.6
-50
0
-25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
30
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Case
100
I
DM
Limited
10
I
D
- Drain Current (A)
r
DS(on)
Limited
100
ms
1
I
D(on)
Limited
0.1
T
C
= 25_C
Single Pulse
BV
DSS
Limited
1
10
1 ms
10 ms
100 ms
10 s, 1 s
dc
0.01
0.1
100
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
4
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
Si3590DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
N−CHANNEL
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 87_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
100
600
Square Wave Pulse Duration (sec)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
www.vishay.com
5
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