UNISONIC TECHNOLOGIES CO., LTD
12P10
Preliminary
Power MOSFET
100V P-CHANNEL MOSFET
DESCRIPTION
The
12P10
uses advanced proprietary, planar stripe, DMOS
technology to provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
FEATURES
* R
DS(ON)
= 0.29Ω @V
GS
= -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Lead-free:
12P10L
Halogen-free: 12P10G
1.Gate
3.Source
ORDERING INFORMATION
Normal
12P10-TN3-R
12P10-TN3-T
Ordering Number
Lead Free
12P10L-TN3-R
12P10L-TN3-T
Halogen Free
12P10G-TN3-R
12P10G-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-262.a
12P10
PARAMETER
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
c
=25℃, unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
-100
V
Gate-Source Voltage
±30
V
Continuous Drain Current
-9.4
A
Pulsed Drain Current (Note 2)
-37.6
A
Avalanche Current (Note 2)
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
370
mJ
Repetitive Avalanche Energy (Note 2)
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
-6.0
V/ns
Power Dissipation
T
a
= 25°C
50
W
P
D
0.4
W/°C
Derate above 25°C
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L=6.3mH, I
AS
=-9.4A, V
DD
=-25V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤-11.5A,
di/dt≤300μA/ s, V
DD
≤BV
DSS
, Starting T
J
=25°C
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
110
2.5
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(T
c
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SYMBOL
BV
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
TEST CONDITIONS
V
GS
=0 V, I
D
=-250µA
I
D
=-250µA,
Referenced to 25°C
V
DS
=-100V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-4.7A
V
DS
=-40V, I
D
=-4.7A (Note 1)
MIN
-100
-0.1
-1
±100
-2.0
0.24
6.3
620
220
65
21
4.6
11.5
15
160
35
60
-4.0
0.29
TYP
MAX UNIT
V
V/°C
µA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1.0MHz
800
290
85
27
V
DS
=-80V, I
D
=-11.5A,
V
GS
=-10V(Note 1, 2)
V
DD
=-50V, I
D
=-11.5A,
R
G
=25Ω(Note 1, 2)
40
330
80
130
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-262.a
12P10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=-9.4A
Maximum Body-Diode Continuous Current
I
S
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=-11.5A,
dI
F
/dt=100A/s(Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
Note:
2. Essentially independent of operating temperature
MIN
TYP
MAX UNIT
-4.0
-9.4
-37.6
110
0.47
V
A
A
ns
nC
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www.unisonic.com.tw
3 of 6
QW-R502-262.a
12P10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-262.a
12P10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
5 of 6
QW-R502-262.a
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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