RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
| 参数名称 | 属性值 |
| 包装说明 | MICROWAVE, X-CXMW-F4 |
| Reach Compliance Code | unknown |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 5 V |
| FET 技术 | HIGH ELECTRON MOBILITY |
| 最高频带 | K BAND |
| JESD-30 代码 | X-CXMW-F4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | UNSPECIFIED |
| 封装形式 | MICROWAVE |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | UNSPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
| MWT-H473GN | MWT-H4SN | MWT-H473LN | MWT-H470GN | MWT-H470LN | MWT-H4GN | |
|---|---|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4 |
| 包装说明 | MICROWAVE, X-CXMW-F4 | UNCASED CHIP, R-XUUC-N4 | MICROWAVE, X-CXMW-F4 | MICROWAVE, S-CQMW-F4 | MICROWAVE, S-CQMW-F4 | UNCASED CHIP, R-XUUC-N4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| FET 技术 | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY |
| 最高频带 | K BAND | K BAND | K BAND | K BAND | K BAND | K BAND |
| JESD-30 代码 | X-CXMW-F4 | R-XUUC-N4 | X-CXMW-F4 | S-CQMW-F4 | S-CQMW-F4 | R-XUUC-N4 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 | 4 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
| 封装形状 | UNSPECIFIED | RECTANGULAR | UNSPECIFIED | SQUARE | SQUARE | RECTANGULAR |
| 封装形式 | MICROWAVE | UNCASED CHIP | MICROWAVE | MICROWAVE | MICROWAVE | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子形式 | FLAT | NO LEAD | FLAT | FLAT | FLAT | NO LEAD |
| 端子位置 | UNSPECIFIED | UPPER | UNSPECIFIED | QUAD | QUAD | UPPER |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| 外壳连接 | SOURCE | - | SOURCE | SOURCE | SOURCE | - |
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