MMBTH34 Surface Mount NPN RF-IF Amp
October 1985
MMBTH34 Surface Mount NPN RF-IF Amp
General Description
This device was designed for common-emitter low noise
amplifier and mixer applications in the 100
mA
to 15 mA
range to 300 MHz and low frequency drift common-base
VHF oscillator applications with high output levels for driving
FET mixers
Absolute Maximum Ratings
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation T
A
e
25 C
Derate above 25 C (Note 1)
Operating Temperature Range
Storage Temperature Range
Lead Temperature for 10 seconds
45V
4 0V
100 mA
350 C
2 8 mW C
b
55 C to
a
150 C
b
55 C to
a
150 C
300 C
Marking
MMBTH34-3K
Refer to Process 47 for graphs
TL G 8548 – 1
Note 1
Package mounted on 99 5% alumina 10 x 8 x 0 6 mm
Electrical Characteristics
T
A
e
25 C unless otherwise specified
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
h
FE
h
FE
V
CE(s)
V
BE(on)
C
cb
h
fe
I
C
e
100
mA
I
C
e
1 0 mA
I
E
e
10
mA
V
CB
e
30V
V
CE
e
30V
V
CE
e
15V I
C
e
7 0 mA
V
CE
e
2 0V I
C
e
20 mA
I
C
e
20 mA I
B
e
2 0 mA
V
CE
e
15V I
C
e
7 0 mA
V
CB
e
10V f
e
1 MHz
V
CE
e
15V I
C
e
15 mA f
e
100 MHz
50
40
15
05
0 95
0 32
V
V
pF
Conditions
Min
45
45
40
50
50
Typ
Max
Units
V
V
V
nA
nA
Order Number MMBTH34 or MMBTH34-HIGH
See NS Package Number M03
C
1995 National Semiconductor Corporation
TL G 8548
RRD-B30M115 Printed in U S A
MMBTH34 Surface Mount NPN RF-IF Amp
Physical Dimensions
inches (millimeters)
SOT-23 3-Lead Molded Dual-In-Line (M)
Order Number MMBTH34 or MMBTH34-HIGH
NS Package Number M03
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION As used herein
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failure to perform when properly used in accordance
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to the user
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National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications
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