Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | , |
| Reach Compliance Code | compliant |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 0.31 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 1 W |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| VN10KT | RNR60H2183BMR36 | VN10KM | XVN10KM | VN0610L | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Fixed Resistor, Metal Film, 0.125W, 218000ohm, 250V, 0.1% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| Reach Compliance Code | compliant | not_compliant | unknown | unknown | unknow |
| 最高工作温度 | 150 °C | 175 °C | 150 °C | 150 °C | 150 °C |
| 表面贴装 | YES | NO | NO | YES | NO |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | - | 不符合 |
| 配置 | Single | - | Single | SINGLE WITH BUILT-IN DIODE | Single |
| 最大漏极电流 (Abs) (ID) | 0.31 A | - | 0.31 A | - | 0.27 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | e0 | e0 | - | e0 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 1 W | - | 1 W | - | 0.8 W |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
| 厂商名称 | - | - | Calogic | Calogic | Calogic |
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