To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
FL10KM-12A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3
3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
➀ ➁ ➂
➁
2.6 ± 0.2
G
10V DRIVE
G
V
DSS ...............................................................................
600V
G
r
DS (ON) (MAX) ................................................................
1.1Ω
G
I
D .........................................................................................
10A
➀
➀
GATE
➁
DRAIN
➂
SOURCE
➂
TO-220FN
APPLICATION
SMPS, Inverter fluorescent light sets, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
V
iso
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
600
±30
10
30
10
40
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
W
°C
°C
V
g
Sep. 2001
L = 200µH
AC for 1minute, Terminal to case
Typical value
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
GS
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
600
±30
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
0.92
4.60
7.0
1150
135
45
24
40
220
85
1.5
—
Max.
—
±10
1
4.0
1.10
5.50
—
—
—
—
—
—
—
—
2.0
3.13
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
V
DD
= 200V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 5A, V
GS
= 0V
Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 10µs
40
10
1
7
5
3
2
100µs
30
1ms
10ms
20
10
0
7
5
3
2
10
10
–1
T
C
= 25°C
0
0
50
100
150
200
7
5
Single Pulse
DC
3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
P
D
= 40W
V
GS
= 10V
6V
T
C
= 25°C
Pulse Test
OUTPUT CHARACTERISTICS
(TYPICAL)
10
P
D
= 40W
T
C
= 25°C
Pulse Test
V
GS
= 10V
6V
5V
4.5V
DRAIN CURRENT I
D
(A)
16
DRAIN CURRENT I
D
(A)
8
12
5V
6
8
4.5V
4
4V
4
4V
2
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
T
C
= 25°C
Pulse Test
32
I
D
= 15A
4
24
3
V
GS
= 10V
16
10A
2
8
5A
1
0
0
4
8
12
16
20
0
0
10
2
3
5 7
10
1
2
3
5 7
10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10
1
V
DS
= 10V
7 Pulse Test
5
3
2
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
12
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
16
10
0
7
5
3
2
8
4
0
0
4
8
12
16
20
10
–1 –1
10
2
3
5 7
10
0
2
3
5 7
10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
Ciss
3
2
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
T
C
h = 25°C
V
DD
= 200V
V
GS
= 10V
t
d(off)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
3
7
5
3
2
Coss
10
2
7
5
3
2
t
f
10
2
7
5
3 T
C
h = 25°C
2 f = 1MH
Z
V
GS
= 0V
3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3
Crss
t
r
t
d(on)
10
1
10
1
2
3
5 7
10
0
2
3
5 7
10
1
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
T
C
= 125°C
75°C
25°C
20
T
C
h = 25°C
I
D
= 10A
16
32
12
V
DS
= 100V
200V
400V
24
8
16
4
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
V
GS
= 10V
7 I
D
= 5A
5 Pulse Test
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
V
DS
= 10V
I
D
= 1mA
4.0
3.0
10
0
7
5
3
2
2.0
1.0
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – c)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
3
2
7
5
D = 1.0
0.5
1.2
10
0
0.2
0.1
P
DM
tw
1.0
0.8
3 0.05
2
10
–1
7
5
3
2
0.02
0.01
Single Pulse
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–2 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
PULSE WIDTH t
w
(s)
Sep. 2001
CHANNEL TEMPERATURE Tch (°C)
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