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UPD431636LGF-A7

产品描述Cache SRAM, 32KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
产品类别存储    存储   
文件大小174KB,共20页
制造商NEC(日电)
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UPD431636LGF-A7概述

Cache SRAM, 32KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

UPD431636LGF-A7规格参数

参数名称属性值
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间5 ns
其他特性TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE
JESD-30 代码R-PQFP-G100
长度20 mm
内存密度1179648 bit
内存集成电路类型CACHE SRAM
内存宽度36
功能数量1
端子数量100
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度1.7 mm
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
宽度14 mm
Base Number Matches1

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DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD431636L
1M-BIT CMOS SYNCHRONOUS FAST SRAM
32K-WORD BY 36-BIT
PIPELINED OPERATION
Description
The
µ
PD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology
using N-channel four-transistor memory cell.
The
µ
PD431636L integrates unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as
SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK).
The
µ
PD431636L is suitable for applications which require synchronous operation, high speed, low voltage, high
density and wide bit configuration, such as cache and buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).
In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal
operation.
The
µ
PD431636LGF is packaged in 100-pin plastic LQFP with a 1.4 mm package thickness for high density and low
capacitive loading.
Features
3.3 V (Chip) / 3.3 V or 2.5 V (I/O) Supply
Synchronous Operation
Internally self-timed Write control
Burst Read / Write: Interleaved Burst and Linear Burst Sequence
Fully Registered Inputs and Outputs for Pipelined operation
All Registers triggered off Positive Clock Edge
3.3 V or 2.5 V LVTTL Compatible : All Inputs and Outputs
Fast Clock Access Time: 4.6 ns (150 MHz), 5 ns (133 MHz)
Asynchronous Output Enable: /G
Burst Sequence Selectable: MODE
Sleep Mode: ZZ (ZZ = Open or Low : Normal Operation )
Separate Byte Write Enable: /BW1 - /BW4, /BWE
Global Write Enable: /GW
Three Chip Enables for Easy Depth Expansion
Common I/O Using Three State Outputs
Ordering Information
Part number
Access Time Clock frequency
4.6 ns
5.0 ns
150 MHz
133 MHz
Package
100-pin plastic LQFP (14x20 mm)
100-pin plastic LQFP (14x20 mm)
µ
PD431636LGF-A6
µ
PD431636LGF-A7
The information in this document is subject to change without notice.
Document No. M12179EJ5V0DS00 (5th edition)
Date Published July 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1996

UPD431636LGF-A7相似产品对比

UPD431636LGF-A7 UPD431636LGF-A6
描述 Cache SRAM, 32KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100 Cache SRAM, 32KX36, 4.6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
零件包装代码 QFP QFP
包装说明 LQFP, LQFP,
针数 100 100
Reach Compliance Code unknown unknown
ECCN代码 3A991.B.2.A 3A991.B.2.A
最长访问时间 5 ns 4.6 ns
其他特性 TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE
JESD-30 代码 R-PQFP-G100 R-PQFP-G100
长度 20 mm 20 mm
内存密度 1179648 bit 1179648 bit
内存集成电路类型 CACHE SRAM CACHE SRAM
内存宽度 36 36
功能数量 1 1
端子数量 100 100
字数 32768 words 32768 words
字数代码 32000 32000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C
组织 32KX36 32KX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified
座面最大高度 1.7 mm 1.7 mm
最大供电电压 (Vsup) 3.465 V 3.465 V
最小供电电压 (Vsup) 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING
端子节距 0.65 mm 0.65 mm
端子位置 QUAD QUAD
宽度 14 mm 14 mm
Base Number Matches 1 1

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