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UPD431532LGF-A10: 产品描述Cache SRAM, 32KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100; 产品类别存储存储; 文件大小177KB，共20页; 制造商NEC(日电)

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UPD431532LGF-A10概述

Cache SRAM, 32KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100

UPD431532LGF-A10规格参数

参数名称	属性值
零件包装代码	QFP
包装说明	LQFP,
针数	100
Reach Compliance Code	unknown
ECCN代码	3A991.B.2.B
最长访问时间	10 ns
其他特性	TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE
JESD-30 代码	R-PQFP-G100
长度	20 mm
内存密度	1048576 bit
内存集成电路类型	CACHE SRAM
内存宽度	32
功能数量	1
端子数量	100
字数	32768 words
字数代码	32000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX32
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
认证状态	Not Qualified
座面最大高度	1.7 mm
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
宽度	14 mm
Base Number Matches	1

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD431532L

1M-BIT CMOS SYNCHRONOUS FAST SRAM

32K-WORD BY 32-BIT

FLOW THROUGH OPERATION

Description

The

PD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology

using N-channel four-transistor memory cell.

The

PD431532L integrates unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as

SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK).

The

PD431532L is suitable for applications which require synchronous operation, high speed, low voltage, high

density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).

In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal

operation.

The

PD431532LGF is packaged in 100-pin plastic LQFP with a 1.4 mm package thickness for high density and low

capacitive loading.

•

Features

•

3.3 V (Chip) / 3.3 V or 2.5 V (I/O) Supply

•

Synchronous Operation

•

Internally self-timed Write control

•

Burst Read / Write: Interleaved Burst and Linear Burst Sequence

•

Fully Registered Inputs for Flow Through Operation

•

All Registers triggered off Positive Clock Edge

•

3.3V or 2.5V LVTTL Compatible: All Inputs and Outputs

•

Fast Clock Access Time: 8.5 ns (100 MHz), 9 ns (100 MHz), 10 ns (83 MHz), and 12 ns (66 MHz)

•

Asynchronous Output Enable: /G

•

Burst Sequence Selectable: MODE

•

Sleep Mode: ZZ (ZZ = Open or Low: Normal Operation)

•

Separate Byte Write Enable: /BW1 - /BW4, /BWE

Global Write Enable: /GW

•

Three Chip Enables for Easy Depth Expansion

•

Common I/O Using Three State Outputs

•

Ordering Information

Part number

Access Time Clock frequency

8.5 ns

9 ns

10 ns

12 ns

100 MHz

83 MHz

66 MHz

Package

100-pin plastic LQFP (14 x 20 mm)

PD431532LGF-A8

PD431532LGF-A9

PD431532LGF-A10

PD431532LGF-A12

The information in this document is subject to change without notice.

Document No. M11999EJ5V0DS00 (5th edition)

Date Published July 1998 NS CP(K)

Printed in Japan

The mark

•

shows major revised points.

1996, 1997

UPD431532LGF-A10相似产品对比

	UPD431532LGF-A10	UPD431532LGF-A12	UPD431532LGF-A8	UPD431532LGF-A9
描述	Cache SRAM, 32KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100	Cache SRAM, 32KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100	Cache SRAM, 32KX32, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100	Cache SRAM, 32KX32, 9ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, LQFP-100
零件包装代码	QFP	QFP	QFP	QFP
包装说明	LQFP,	LQFP,	LQFP,	LQFP,
针数	100	100	100	100
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	10 ns	12 ns	8.5 ns	9 ns
其他特性	TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE	TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE	TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE	TTL COMPATIBLE INPUTS/OUTPUTS; INTERLEAVED AND LINEAR BURST; BYTE WRITE; SELF TIMED WRITE
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
长度	20 mm	20 mm	20 mm	20 mm
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	32	32	32	32
功能数量	1	1	1	1
端子数量	100	100	100	100
字数	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C
组织	32KX32	32KX32	32KX32	32KX32
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.7 mm	1.7 mm	1.7 mm	1.7 mm
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	QUAD
宽度	14 mm	14 mm	14 mm	14 mm
Base Number Matches	1	1	1	1

UPD431532LGF-A10

UPD431532LGF-A10概述

UPD431532LGF-A10规格参数

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UPD431532LGF-A10相似产品对比

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