15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
15 A, 60 V, 0.13 ohm, P沟道, 硅, POWER, 场效应管
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Renesas(瑞萨电子) |
包装说明 | LDPAK-3 |
针数 | 3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
Factory Lead Time | 1 week |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (Abs) (ID) | 15 A |
最大漏极电流 (ID) | 15 A |
最大漏源导通电阻 | 0.13 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSIP-T3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | 225 |
极性/信道类型 | P-CHANNEL |
最大功率耗散 (Abs) | 50 W |
最大脉冲漏极电流 (IDM) | 30 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
HAF1002-90L | HAF1002 | HAF1002-90S | HAF1002-90STL | HAF1002S | HAF1002L | HAF1002-90STR | |
---|---|---|---|---|---|---|---|
描述 | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET | 15 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 2 | 2 | 2 | 3 | 2 |
表面贴装 | NO | Yes | YES | YES | YES | NO | YES |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
是否无铅 | 含铅 | - | 不含铅 | 含铅 | - | - | 不含铅 |
是否Rohs认证 | 不符合 | - | 符合 | 不符合 | - | - | 符合 |
厂商名称 | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
包装说明 | LDPAK-3 | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 | - | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | - | compli | unknow | compli | compli | compli |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (Abs) (ID) | 15 A | - | 15 A | 15 A | 15 A | 15 A | 15 A |
最大漏极电流 (ID) | 15 A | - | 15 A | 15 A | 15 A | 15 A | 15 A |
最大漏源导通电阻 | 0.13 Ω | - | 0.13 Ω | 0.13 Ω | 0.13 Ω | 0.13 Ω | 0.13 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSIP-T3 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 |
工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 225 | - | NOT SPECIFIED | 225 | - | - | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL | - | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
最大功率耗散 (Abs) | 50 W | - | 50 W | 50 W | 50 W | 50 W | 50 W |
最大脉冲漏极电流 (IDM) | 30 A | - | 30 A | 30 A | 30 A | 30 A | 30 A |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED |
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