RJK6011DJE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1577-0300
Rev.3.00
Oct 03, 2008
Features
•
Low on-resistance
•
Low drive current
•
High density mounting
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Source
2. Drain
3. Gate
32
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
Pch
θ
ch-a
Tch
Tstg
Ratings
600
±30
0.1
0.4
0.1
0.4
0.9
139
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1577-0300 Rev.3.00 Oct 03, 2008
Page 1 of 6
RJK6011DJE
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
35
25
4.7
0.9
33
16
54
300
3.7
0.4
2.7
0.80
Max
—
1
±0.1
5
52
—
—
—
—
—
—
—
—
—
—
1.35
Unit
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.05 A, V
GS
= 10 V
Note2
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 0.05 A
V
GS
= 10 V
R
L
= 6000
Ω
Rg = 10
Ω
V
DD
= 480 V
V
GS
= 10 V
I
D
= 0.1 A
I
F
= 0.1 A, V
GS
= 0
Note2
Notes: 2. Pulse test
3. Since this device is equipped with high voltage FET chip (V
DSS
≥
600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
REJ03G1577-0300 Rev.3.00 Oct 03, 2008
Page 2 of 6
RJK6011DJE
Main Characteristics
Maximum Safe Operation Area
10
0.4
Pulse Test
Ta = 25°C
5.8 V
6V
8V
Typical Output Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
1
10
µ
s
0.3
V
GS
= 10 V
5.6 V
0.1
PW = 100
µs
0.2
5.4 V
5.2 V
5V
0.01
Operation in this
area is limited by
R
DS(on)
0.1
0.001
0.0001
0.1
Ta = 25°C
1 shot
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
Pulse Test
V
GS
= 10 V
Ta = 25°C
50
Typical Transfer Characteristics
0.1
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
0.01
25°C
0.001
Tc = 75°C
−25°C
20
0.0001
0
2
4
6
8
10
10
0.01
0.1
1
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
100
Pulse Test
V
GS
= 10 V
0.05 A
I
D
= 0.1 A
60
0.025 A
40
100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Capacitance C (pF)
80
Ciss
10
Coss
1
V
GS
= 0
f = 1 MHz
Ta = 25°C
100
200
300
Crss
20
0
-25
0
25
50
75
100 125 150
0.1
0
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
REJ03G1577-0300 Rev.3.00 Oct 03, 2008
Page 3 of 6
RJK6011DJE
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Voltage V
GS
(V)
0.4
Dynamic Input Characteristics (Typical)
Drain to Source Voltage V
DS
(V)
800
Reverse Drain Current I
DR
(A)
=1
I
D
= 0.1 A
Ta = 25
°C
V
GS
0V
16
Pulse Test
Ta = 25
°C
00
V
DD
V
30
V
DS
400
480
V
600
12
0.3
8
0.2
5 V, 10 V
0.1
V
GS
= 0,
−5
V
0
200
10
0
V
30
0
V
V
DD
= 480 V
4
0
0
0.8
1.6
2.4
3.2
4.0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
V
DS
= 10 V
I
D
= 10 mA
1 mA
4
0.1 mA
5
3
2
1
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
REJ03G1577-0300 Rev.3.00 Oct 03, 2008
Page 4 of 6
RJK6011DJE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
ulse
ot p
1sh
θch
– a (t) =
γ
s (t) •
θch
– a
θch
– a = 139°C/W, Ta = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
100
1000
10000
D=
PW
T
0.01
10
µ
100
µ
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1577-0300 Rev.3.00 Oct 03, 2008
Page 5 of 6
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