RJK5020DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1263-0200
Rev.2.00
Dec 19, 2006
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
500
±30
40
120
40
120
12.5
8.6
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Dec 19, 2006 page 1 of 6
RJK5020DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.102
5150
525
55
52
115
180
125
126
26
54
0.90
450
Max
—
1
±0.1
4.5
0.118
—
—
—
—
—
—
—
—
—
—
1.50
—
Unit
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 20 A
V
GS
= 10 V
R
L
= 12.5
Ω
Rg = 10
Ω
V
DD
= 400 V
V
GS
= 10 V
I
D
= 40 A
I
F
= 40 A, V
GS
= 0
Note4
I
F
= 40 A, V
GS
= 0
di
F
/dt = 100 A/µs
Rev.2.00 Dec 19, 2006 page 2 of 6
RJK5020DPK
Main Characteristics
Power vs. Temperature Derating
400
1000
300
100
30
10
3
Operation in this
1
area is limited by
R
DS(on)
Maximum Safe Operation Area
Pch (W)
I
D
(A)
300
1m
s
Channel Dissipation
10
µ
s
10
0
µ
s
200
Drain Current
100
0.3
0.1
0.03
0.01
PW = 10 ms
(1shot)
DC Operation
(Tc = 25°C)
Ta = 25°C
1
3
10
0
50
100
150
200
30
100
300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
10 V
5.5 V
5.7 V
5.3 V
7V
100
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
40
20
10
5
2
1
0.5
0.2
0.1
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
30
Drain Current
20
V
GS
= 4.9 V
10
Pulse Test
0
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
0.5
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.5
V
GS
= 10 V
Pulse Test
0.4
I
D
= 40 A
20 A
0.2
10 A
0.1
0
−25
0.2
0.1
0.05
0.3
0.02
0.01
1
3
10
30
Pulse Test
100
300
1000
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
Rev.2.00 Dec 19, 2006 page 3 of 6
RJK5020DPK
Body-Drain Diode Reverse
Recovery Time
1000
100000
30000
V
GS
= 0
f = 1 MHz
Ciss
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
2
1
1
3
10
30
100
300
1000
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
10000
3000
1000
300
100
30
10
0
100
Coss
Crss
200
300
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
DR
(A)
I
D
= 40 A
V
DD
= 100 V
250 V
400 V
V
DS
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
16
50
800
V
GS
40
600
12
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
30
400
8
20
10
5, 10 V
V
GS
= 0, -5 V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
200
V
DD
= 400 V
250 V
100 V
40
80
120
160
4
0
0
200
Gate Charge
Qg (nC)
Source to Drain Voltage
V
SD
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
4
I
D
= 10 mA
1 mA
3
Gate to Source Cutoff Voltage
V
GS(off)
(V)
2
0.1 mA
1
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Rev.2.00 Dec 19, 2006 page 4 of 6
RJK5020DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.625°C/W, Tc = 25°C
P
DM
lse
pu
t
0.05
0.03
D=
PW
T
0.02
1
0.0
1s
PW
T
ho
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.2.00 Dec 19, 2006 page 5 of 6
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
