RJK1536DPE
N-Channel Power MOSFET
High-Speed Switching Use
REJ03G1612-0200
Rev.2.00
Mar 11, 2008
Features
•
V
DSS
: 150 V
•
R
DS(on)
: 30 mΩ (Max)
•
I
D
: 50 A
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
1. Gate
2. Drain
3. Source
4. Drain
2, 4
D
1
1 G
2
3
S
3
Application
•
Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
2. STch = 25°C, Tch
≤
150°C, L = 100
µH
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP Note2
Pch
Note1
θch-c
Tch
Tstg
Ratings
150
±20
50
100
50
100
25
125
1.0
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1612-0200 Rev.2.00 Mar 11, 2008
Page 1 of 6
RJK1536DPE
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 3. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
V
DS(on)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
3.0
0.60
24
5000
560
165
50
75
250
100
0.9
130
Max
—
100
±0.1
4.0
0.75
30
—
—
—
—
—
—
—
1.5
—
Unit
V
µA
µA
V
V
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note3
I
D
= 25 A, V
GS
= 10 V
Note3
I
D
= 25 A, V
GS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 80 V
I
D
= 25 A
V
GS
= 10 V
R
G
= 25
Ω
I
F
= 25 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0
di
F
/dt = 100 A/µs
REJ03G1612-0200 Rev.2.00 Mar 11, 2008
Page 2 of 6
RJK1536DPE
Main Characteristics
Power vs. Temperature Derating
150
1000
Maximum Safe Operation Area
Ta = 25°C
10
10
0
µ
s
Channel Dissipation Pch (W)
100
70
50
25
Drain Current I
D
(A)
125
100
µ
s
10
DC Operation
(Tc = 25°C)
s
1m
1
PW = 10 ms
(1shot)
0.1
0.01
0.1
Operation in this
area is limited by
R
DS(on)
0
50
100
150
200
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
7V
Typical Transfer Characteristics
50
V
DS
= 10 V
Pulse Test
4.2 V
Drain Current I
D
(A)
Drain Current I
D
(A)
40
40
30
4V
30
20
V
GS
= 3.8 V
20
10
Pulse Test
10
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(mΩ)
100
V
GS
= 10 V
Drain to Source on State Resistance vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS(on)
(mΩ)
30
Pulse Test
28
26
10
24
I
D
= 50 A
5A
22
25 A
20
1
1
10
Pulse Test
0
4
8
12
16
20
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1612-0200 Rev.2.00 Mar 11, 2008
Page 3 of 6
RJK1536DPE
Drain to Source on State Resistance
vs. Temperature
60
V
GS
= 10 V
Pulse Test
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
1000
50
100
Tc =
−25°C
40
25 A
I
D
= 50 A
10
25°C
75°C
V
DS
= 10 V
Pulse Test
30
10 A
20
10
−25
1
0
25
50
75
100 125 150
0.1
0.1
1
10
100
Case Temperature Tc (°C)
Drain Current
I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
Reverse Recovery Time trr (ns)
1000
Capacitance C (pF)
1000
Coss
Crss
100
100
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
10
10
V
GS
= 0
f = 1 MHz
1
10
100
1
10
100
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage V
DS
(V)
120
V
DS
V
GS
12
Switching Time t (ns)
V
DD
= 50 V
80 V
100 V
I
D
= 50 A
Gate to Source Voltage V
GS
(V)
160
16
1000
V
GS
= 10 V, V
DD
= 80 V
PW = 5
µs,
duty
≤
1 %
R
G
= 25
Ω
tf
td(off)
80
8
100
tr
td(on)
40
V
DD
= 100 V
80 V
50 V
4
0
120
160
200
10
1
10
100
0
40
80
Gate Charge Qg (nC)
Drain Current I
D
(A)
REJ03G1612-0200 Rev.2.00 Mar 11, 2008
Page 4 of 6
RJK1536DPE
Reverse Drain Current vs.
Source to Drain Voltage
50
Avalanche Current vs.Case Temperature
30
L = 100
µH
I
DR
(A)
Avalanche Current I
AP
(A)
Pulse Test
40
10 V
30
5V
25
20
15
10
5
0
25
Reverse Drain Current
20
V
GS
= 0 V, -5 V
10
0
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150 175 200
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
1
D=1
0.5
0.3
0.2
0.1
0.05
0.1
0.02
1
0.0
lse
pu
t
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.00°C/W, Tc = 25°C
P
DM
PW
T
0.03
1
o
sh
D=
PW
T
0.01
100
µ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
25
Ω
Vin
10 V
V
DD
= 80 V
td(on)
Vout
Monitor
Vin
Vout
10%
10%
Waveform
90%
10%
90%
td(off)
tf
90%
tr
REJ03G1612-0200 Rev.2.00 Mar 11, 2008
Page 5 of 6
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