RJK1535DPJ, RJK1535DPE, RJK1535DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0479-0200
Rev.2.00
Jan.14.2005
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
LDPAK
D
4
4
4
G
1
1
2
3
1
S
3
RJK1535DPE
2
3
RJK1535DPF
RJK1535DPJ
2
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
150
±30
40
100
40
100
30
67.5
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00, Jan.14.2005, page 1 of 7
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
trr
Qrr
Min
150
—
—
3.0
13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
22
0.045
1420
300
42
30
170
70
80
35
9
16
1.0
110
0.5
Max
—
1
±0.1
4.5
—
0.052
—
—
—
—
—
—
—
—
—
—
1.5
—
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
DS
= 10 V
Note4
I
D
= 20 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 20 A
V
GS
= 10 V
R
L
= 3.75
Ω
Rg = 10
Ω
V
DD
= 120 V
V
GS
= 10 V
I
D
= 40 A
I
F
= 40 A, V
GS
= 0
Note4
I
F
= 40 A, V
GS
= 0
diF/dt = 100 A/µs
Rev.2.00, Jan.14.2005, page 2 of 7
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Main Characteristics
Power vs. Temperature Derating
160
Pch (W)
Maximum Safe Operation Area
1000
Ta = 25°C
300
I
D
(A)
100
30
10
3
Operation in this
1
R
DS(on)
0.3
0.1
0.03
0.01
120
1m
10
s
10
0
µ
µ
s
s
Channel Dissipation
80
Drain Current
area is limited by
PW = 10 ms
(1shot)
DC Operation
(Tc = 25°C)
40
0
50
100
150
Tc (°C)
200
1
Case Temperature
100 300 1000
30
3
10
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
8V
40
I
D
(A)
Typical Transfer Characteristics
50
V
DS
= 10 V
Pulse Test
40
I
D
(A)
Drain Current
7.5 V
Pulse Test
7V
30
6.5 V
30
Drain Current
20
6V
20
10
V
GS
= 5.5 V
10
Tc = 75°C
25°C
−25°C
8
V
GS
(V)
10
0
4
8
12
Drain to Source Voltage
16
V
DS
(V)
20
0
2
4
6
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
V
GS
= 10 V
0.5
6
0.2
0.1
0.05
4
2
I
D
= 40 A
20 A
10 A
0.02
0.01
1
3
10
30
Drain Current
Pulse Test
100 300
I
D
(A)
1000
0
4
8
12
16
V
GS
(V)
20
Gate to Source Voltage
Rev.2.00, Jan.14.2005, page 3 of 7
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Static Drain to Source on State Resistance
vs. Temperature
0.2
V
GS
= 10 V
Pulse Test
0.16
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance |yfs| (S)
100
30
10
3
1
0.3
0.1
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
I
D
(A)
30
100
75°C
25°C
Tc =
−25°C
0.12
0.08
I
D
= 40 A
10 A
20 A
0.04
0
−25
0
25
50
75
100 125
Tc (°C)
150
Case Temperature
Drain Current
Body-Drain Diode Reverse
Recovery Time
1000
100000
30000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
100
50
20
10
5
2
1
1
3
10
30
100 300 1000
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
240
16
V
GS
180
V
DD
= 30 V
60 V
120 V
V
DS
12
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
200
10000
3000
1000
300
100
30
10
0
50
100
V
DS
(V)
150
Drain to Source Voltage
Crss
Coss
Ciss
10000
Switching Characteristics
V
GS
= 10 V, V
DD
= 75 V
PW = 5
µs,
duty < 1 %
R
G
= 10
Ω
V
DS
(V)
V
GS
(V)
I
D
= 40 A
Switching Time t (ns)
Drain to Source Voltage
Gate to Source Voltage
1000
tf
td(off)
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
I
D
(A)
tr
tf
120
8
100
60
V
DD
= 120 V
60 V
30 V
0
8
16
24
32
4
0
40
100
Gate Charge
Qg (nC)
Rev.2.00, Jan.14.2005, page 4 of 7
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Reverse Drain Current vs.
Source to Drain Voltage
50
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
I
D
= 10 mA
4
1 mA
3
40
Reverse Drain Current
30
20
10 V
5V
2
0.1 mA
V
GS
= 0 V
10
1
0
-25
Pulse Test
0
0.4
0.8
1.2
1.6
V
SD
(V)
2.0
0
25
50
75
100 125 150
Tc (°C)
Source to Drain Voltage
Case Temperature
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
P
DM
PW
T
0.03
0.02
1
e
0.0
puls
ot
sh
1
100
µ
1m
10 m
Pulse Width
D=
PW
T
0.01
10
µ
100 m
PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 75 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
Rev.2.00, Jan.14.2005, page 5 of 7
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