RJK1008DPP
N-Channel Power MOSFET
High-Speed Switching Use
REJ03G1708-0100
Rev.1.00
Jul 03, 2008
Features
•
V
DSS
: 100 V
•
R
DS(on)
: 11 mΩ (Max)
•
I
D
: 80 A
Outline
RENESAS Package code: PRSS0003AB-A
(Package name : TO-220FN)
2
1
1. Gate
2. Drain
3. Source
1
2 3
3
Application
•
Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
2. STch = 25°C, Tch
≤
150°C, L = 100
µH
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP Note2
Pch
Note1
θch-c
Tch
Tstg
Ratings
100
±20
80
160
80
160
40
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Page 1 of 6
RJK1008DPP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 3. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
V
DS(on)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
3.0
0.34
8.5
5200
820
220
52
100
230
125
0.9
70
Max
—
100
±0.1
4.0
0.44
11
—
—
—
—
—
—
—
1.5
—
Unit
V
µA
µA
V
V
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 100 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note3
I
D
= 40 A, V
GS
= 10 V
Note3
I
D
= 40 A, V
GS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 50 V
I
D
= 40 A
V
GS
= 10 V
R
G
= 25
Ω
I
F
= 40 A, V
GS
= 0
I
F
= 80 A, V
GS
= 0
di
F
/dt = 100 A/µs
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Page 2 of 6
RJK1008DPP
Main Characteristics
Power vs. Temperature Derating
50
1000
Maximum Safe Operation Area
Ta = 25°C
10
10
µ
s
Channel Dissipation Pch (W)
Drain Current I
D
(A)
40
100
0
µ
s
s
1m
30
10
DC Operation
(Tc = 25°C)
20
1
PW = 10 ms
(1shot)
10
0.1
Operation in this
0.01
0.1
area is limited by
R
DS(on)
0
50
100
150
200
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
4.4 V
Drain Current I
D
(A)
Drain Current I
D
(A)
80
7V
80
60
60
40
V
GS
= 4.0 V
40
Tc = 75°C
20
Pulse Test
20
25°C
−25°C
0
2
4
6
8
10
0
1
2
3
4
5
6
7
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(mΩ)
100
V
GS
= 10 V
Pulse Test
Drain to Source on State Resistance vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS(on)
(mΩ)
20
Pulse Test
15
10 A
40 A
10
10
I
D
= 80 A
5
1
1
10
100
0
5
10
15
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Page 3 of 6
RJK1008DPP
Drain to Source on State Resistance
vs. Temperature
20
V
GS
= 10 V
Pulse Test
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
1000
16
100
Tc =
−25°C
12
I
D
= 80 A
40 A
10 A
10
8
25°C
75°C
V
DS
= 10 V
Pulse Test
4
1
0
−25
0
25
50
75
100 125 150
0.1
0.1
1
10
100
Case Temperature Tc (°C)
Drain Current
I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
Reverse Recovery Time trr (ns)
100
Capacitance C (pF)
1000
Coss
Crss
100
di / dt =
−100
A /
µs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
100
10
0.1
V
GS
= 0
f = 1 MHz
1
10
100
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
V
DD
= 25 V
50 V
80 V
Gate to Source Voltage V
GS
(V)
160
V
GS
16
1000
V
GS
= 10 V, V
DD
= 50 V
PW = 5
µs,
duty
≤
1 %
R
G
= 25
Ω
120
V
DS
12
td(off)
tf
80
8
100
tr
td(on)
40
V
DD
= 80 V
50 V
25 V
I
D
= 80 A
4
0
0
40
80
120
160
200
10
0.1
1
10
100
Gate Charge Qg (nC)
Drain Current I
D
(A)
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Page 4 of 6
RJK1008DPP
Reverse Drain Current vs.
Source to Drain Voltage
100
Avalanche Current vs.Case Temperature
50
L = 100
µH
I
DR
(A)
80
10 V
5V
Avalanche Current I
AP
(A)
Pulse Test
40
Reverse Drain Current
60
30
40
V
GS
= 0 V, -5 V
20
20
10
0
25
0
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150 175 200
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10.0
3
1
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 2.78°C/W, Tc = 25°C
P
DM
0.05
0.02
D=
PW
T
PW
T
0.03
0.01
1shot pulse
0.01
100
µ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
25
Ω
Vin
10 V
V
DD
= 80 V
td(on)
Vout
Monitor
Vin
Vout
10%
10%
Waveform
90%
10%
90%
td(off)
tf
90%
tr
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Page 5 of 6
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