RJM0306JSP
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1571-0100
Rev.1.00
Nov 16, 2007
Features
•
•
•
•
•
Two elements each of N and P channels are incorporated (suitable for H-bridge circuit)
High density mounting
Low on-resistance
Capable of 4 V gate drive
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
S7
Pin No.
MOS4
Pch
MOS3
Pch
6G
1
2
3
D1
D5
4
5
2G
MOS1
Nch
4G
MOS2
Nch
6
7
8
Element
MOS1 (Nch)
MOS4 (Pch)
MOS1 (Nch)
MOS1 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS3 (Pch)
MOS3 (Pch)
MOS3 (Pch)
MOS4 (Pch)
MOS4 (Pch)
Drain
Gate
Source
Gate
Source
Gate
Electrode
Drain
Gate
65
87
4
23
8G
1
S3
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
Page 1 of 12
RJM0306JSP
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note 1
I
APNote 4
E
ARNote 4
Pch
Note 2
Pch
Note 3
Tch
Tstg
Value
MOS1, 2 (Nch)
MOS3, 4 (Pch)
30
–30
±20
±20
3.5
–3.5
28
–28
3.5
–3.5
1.22
1.22
1.5
2.2
150
–55 to +150
Unit
V
V
A
A
A
mJ
W
W
°C
°C
PW
≤
10
µs,
duty cycle
≤
1%
1 Drive operation: When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
2 Drive operation: When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
Value at Tch = 25°C, Rg
≥
50
Ω
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
Page 2 of 12
RJM0306JSP
Electrical Characteristics
MOS1, 2 (Nch)
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Note:
5. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
±20
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
50
70
80
290
85
30
5.0
1.2
0.6
12
12
35
8
0.88
25
Max
—
—
1
10
±10
2.5
65
105
130
—
—
—
—
—
—
—
—
—
—
1.15
—
Unit
V
V
µA
µA
µA
V
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 24 V, V
GS
= 0,
Ta = 125°C
V
GS
=
±16
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2.0 A
Note5
, V
GS
= 10 V
I
D
= 2.0 A
Note5
, V
GS
= 4.5 V
I
D
= 2.0 A
Note5
, V
GS
= 4.0 V
V
DS
= 10 V, V
GS
= 0 ,
f = 1 MHz
V
DD
= 10 V, V
GS
= 10 V,
I
D
= 3.5 A
V
GS
= 10 V, I
D
= 2.0 A,
V
DD
≅
10 V, R
L
= 5
Ω,
R
G
= 4.7
Ω
I
F
= 3.5 A, V
GS
= 0
Note5
I
F
= 3.5A, V
GS
= 0
di
F
/dt = 100 A/µs
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
Page 3 of 12
RJM0306JSP
MOS3, 4 (Pch)
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Note:
5. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
–30
±20
—
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
90
140
160
320
85
50
6.0
1.4
1.0
30
17
30
7
–0.92
30
Max
—
—
–1
–10
±10
–2.5
120
210
260
—
—
—
—
—
—
—
—
—
—
–1.2
—
Unit
V
V
µA
µA
µA
V
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
DS
= –24 V, V
GS
= 0,
Ta = 125°C
V
GS
=
±16
V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –2.0 A
Note5
, V
GS
= –10 V
I
D
= –2.0 A
Note5
, V
GS
= –4.5 V
I
D
= –2.0 A
Note5
, V
GS
= –4.0 V
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
V
DD
= –10 V, V
GS
= –10 V,
I
D
= –3.5 A
V
GS
= –10 V, I
D
= –2.0 A,
V
DD
≅
–10 V, R
L
= 5.0
Ω,
R
G
= 4.7
Ω
I
F
= –3.5 A, V
GS
= 0
Note5
I
F
= –3.5 A, V
GS
= 0
di
F
/dt = 100 A/µs
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
Page 4 of 12
RJM0306JSP
Main Characteristics
MOS1, 2 (Nch)
Maximum Safe Operation Area
100
10
DC
Typical Output Characteristics
10
4.2 V
4.5 V
10 V
3.8 V
Drain Current I
D
(A)
PW
Op
er
ati
=1
1
0m
on
s(
1s
Drain Current I
D
(A)
10
µ
10
0
µ
s
1m
s
s
(P
ho
W
t)
5
3.2 V
0.1
Operation in
this area is
limited by R
DS (on)
≤
1
0 s
ote6
)
N
2.8 V
0.01
0.001
0.1
Ta = 25°C
1 shot Pulse
Pulse Test
V
GS
= 0 V
1
10
100
0
5
10
Drain to Source Voltage V
DS
(V)
Note 6: When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
1000
Typical Transfer Characteristics
10
1
0.1
0.01
0.001
0.0001
0.00001
0
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
100
4.5 V
V
GS
= 4 V
Tc = 150°C
25°C
−40°C
10 V
10
0.1
1
Pulse Test
1
2
3
4
5
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
I
D
= 2 A
1000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
150
V
GS
= 4 V
100
4.5 V
Capacitance C (pF)
100
Coss
50
10 V
0
−50
Crss
−25
10
0
25
50
75 100 125 150
0
10
20
30
40
50
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
Page 5 of 12
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