RJL5014DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1690-0300
Rev.3.00
Jun 13, 2008
Features
•
•
•
•
Built-in fast recovery diode
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
≤
10
µs,
duty cycle
≤
1%
Value at Tc = 25°C
STch = 25°C, Tch
≤
150°C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
Note4
I
D
I
D (pulse)
I
DR
Note1
Ratings
500
±30
19
57
19
57
4
0.88
35
3.57
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
I
DR (pulse)
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Note1
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 1 of 6
RJL5014DPP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.32
1700
190
23
32
27
95
20
43
8.2
21.8
1.00
160
Max
—
10
±0.1
4.0
0.40
—
—
—
—
—
—
—
—
—
—
1.65
—
Unit
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 9.5 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 9.5 A
V
GS
= 10 V
R
L
= 26.3
Ω
Rg = 10
Ω
V
DD
= 400 V
V
GS
= 10 V
I
D
= 19 A
I
F
= 19 A, V
GS
= 0
Note5
I
F
= 19 A, V
GS
= 0
di
F
/dt = 100 A/µs
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 2 of 6
RJL5014DPP
Main Characteristics
Maximum Safe Operation Area
100
10
Typical Output Characteristics
20
6V
8V
10 V
5.6 V
5.8 V
µ
s
5.4 V
5.2 V
Drain Current I
D
(A)
Drain Current I
D
(A)
10
16
PW
= 10
0
µ
s
Pulse Test
1
Operation in this
area is limited by
R
DS(on)
12
5.0 V
0.1
8
4.8 V
0.01
Ta = 25°C
1 shot
4
4.6 V
V
GS
= 4.4 V
0.001
0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
Pulse Test
V
GS
= 10 V
Drain Current I
D
(A)
10
Tc = 75°C
25°C
−25°C
1
1
0.1
0
2
4
6
8
10
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
V
GS
= 10 V
I
D
= 19 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time
1000
0.8
0.6
9.5 A
Reverse Recovery Time trr (ns)
1.0
100
0.4
3A
0.2
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 3 of 6
RJL5014DPP
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Ciss
800
Dynamic Input Characteristics
I
D
= 19 A
V
GS
1000
600
V
DS
V
DD
= 100 V
250 V
400 V
12
100
Coss
400
8
10
V
GS
= 0
f = 1 MHz
50
100
150
200
Crss
200
V
DD
= 400 V
250 V
100 V
20
40
60
80
4
1
0
0
0
100
250
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage
20
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
I
D
= 10 mA
1 mA
3
0.1 mA
Reverse Drain Current I
DR
(A)
Pulse Test
16
V
GS
= 0, -5 V
12
5V
8
4
10 V
4
2
1
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 4 of 6
Gate to Source Voltage V
GS
(V)
16
Capacitance C (pF)
RJL5014DPP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 3.57°C/W, Tc = 25°C
e
uls
0.01
1s
tp
ho
P
DM
PW
T
D=
PW
T
0.001
10
µ
100
µ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 5 of 6
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