RJK0304DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1352-0600
Rev.6.00
Apr 19, 2006
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 4.0 m
Ω
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Note1
Ratings
30
+16/-12
35
140
35
14
19
50
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.6.00 Apr 19, 2006 page 1 of 6
RJK0304DPB
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.0
5.5
60
2500
850
130
0.5
17
6.7
3.7
8.5
3.2
41
4.0
0.84
35
Max
—
± 0.1
1
2.5
4.8
7.2
—
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= +16/–12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 17.5 A, V
GS
= 10 V
Note4
I
D
= 17.5
Note4
A, V
GS
= 4.5 V
I
D
= 17.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 35 A
V
GS
= 10 V, I
D
= 17.5 A,
V
DD
≅
10 V,R
L
= 0.57
Ω,
Rg = 4.7
Ω
IF = 35 A, V
GS
= 0
Note4
IF = 35 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
Rev.6.00 Apr 19, 2006 page 2 of 6
RJK0304DPB
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
60
100
µ
s
µ
Channel Dissipation
Drain Current
40
10
20
1
limited by R
DS(on)
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
2.8 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
30
2.6 V
20
I
D
(A)
Drain Current
V
GS
= 2.4 V
40
40
30
Drain Current
20
25°C
Tc = 75°C
–25°C
10
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
Pulse Test
60
30
40
10
V
GS
= 4.5 V
3
10 V
I
D
= 10 A
20
5A
2A
0
1
1
3
10
30
100
300 1000
4
8
12
16
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.6.00 Apr 19, 2006 page 3 of 6
RJK0304DPB
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
10000
3000
Ciss
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
16
1000
300
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
12
I
D
= 2 A, 5 A, 10 A
8
V
GS
= 4.5 V
4
10 V
0
–25
0
25
50
2 A, 5 A, 10 A
Coss
Crss
75
100 125 150
30
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
V
GS
16
V
DD
= 25 V
10 V
V
DS
Reverse Drain Current I
DR
(A)
I
D
= 35 A
Pulse Test
10 V
40
5V
40
Drain to Source Voltage
30
12
Gate to Source Voltage
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
40
I
AP
= 14 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
32
24
16
8
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Rev.6.00 Apr 19, 2006 page 4 of 6
RJK0304DPB
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.5°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.05
0.03
2
0.0
lse
1
t pu
0.0
ho
1s
0.01
10
µ
100
µ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.6.00 Apr 19, 2006 page 5 of 6
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