RJK0301DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1338-0900
Rev.9.00
Apr 19, 2006
Features
•
•
•
•
•
High speed switching
Capable of 4.5V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.3 m
Ω
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Note1
Ratings
30
+16/ –12
60
240
60
30
90
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.9.00 Apr 19, 2006 page 1 of 6
RJK0301DPB
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.3
3.0
110
5000
1450
220
0.8
32
14.5
7.0
11.5
4.5
58
6.0
0.84
50
Max
—
±0.1
1
2.5
2.8
4.0
—
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= +16/–12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 30 A, V
GS
= 10 V
Note4
I
D
= 30 A, V
GS
= 4.5 V
Note4
I
D
= 30 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 50 A
V
GS
= 10 V, I
D
= 30 A,
V
DD
≅
10 V,R
L
= 0.33
Ω,
Rg = 4.7
Ω
IF = 60 A, V
GS
= 0
Note4
IF = 60 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
Rev.9.00 Apr 19, 2006 page 2 of 6
RJK0301DPB
Main Characteristics
Power vs. Temperature Derating
80
1000
10
Maximum Safe Operation Area
Pch (W)
I
D
(A)
60
100
10
µ
s
0
µ
s
Channel Dissipation
1 ms
Drain Current
40
10
PW = 10 ms
DC
ati
er
Op
20
1
Operation in
this area is
limited by R
DS(on)
on
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
3.1 V
4.5 V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
10 V
2.9 V
60
I
D
(A)
Drain Current
80
80
60
Drain Current
40
2.7 V
40
20
Pulse Test
0
2
4
6
V
GS
= 2.5 V
20
Tc = 75°C
25°C
–25°C
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
Pulse Test
150
30
100
10
50
I
D
= 20 A
10 A
5A
V
GS
= 4.5 V
3
10 V
1
1
3
10
30
100
300 1000
0
4
8
12
16
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.9.00 Apr 19, 2006 page 3 of 6
RJK0301DPB
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
10000
3000
Ciss
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
8
1000
Coss
300
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
Crss
6
I
D
= 5 A, 10 A, 20 A
4
V
GS
= 4.5 V
5 A, 10 A, 20 A
2
0
–25
10 V
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
100
Dynamic Input Characteristics
V
DS
(V)
50
V
GS
16
Reverse Drain Current I
DR
(A)
I
D
= 60 A
V
DD
= 25 V
10 V
Pulse Test
10 V
80
5V
40
Drain to Source Voltage
30
V
DS
20
12
Gate to Source Voltage
60
8
40
V
GS
= 0, –5V
10
V
DD
= 25 V
10 V
4
20
0
0
40
80
120
160
0
200
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
I
AP
= 30 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Rev.9.00 Apr 19, 2006 page 4 of 6
RJK0301DPB
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.3
0.5
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 1.92°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.03
0.05
2
0.0
lse
01
t pu
0.
o
h
1s
100
µ
0.01
10
µ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.9.00 Apr 19, 2006 page 5 of 6
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