RJJ1011DPD
P Channel Power MOS FET
High Speed Switching
REJ03G1623-0200
Rev.2.00
Jun 16, 2008
Features
•
•
•
•
V
DSS
: –100 V
R
DS(on)
: 0.30
Ω
(Max)
I
D
: –6 A
Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
3
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
12
3
1
2, 4
Application
•
Motor control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
(Tc = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (Pulsed)*
1
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
AP
P
ch
θch-c
Tch
Tstg
Ratings
–100
±20
–6
–12
–6
30
4.17
–55 to +150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 100
µH
1. Pulse width limited by safe operating area.
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
Page 1 of 6
RJJ1011DPD
Electrical Characteristics
(Tc = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate-source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Min.
–100
±20
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
–1.9
0.26
0.30
930
80
50
10
15
65
35
–0.85
Max.
—
—
–1
±10
–2.5
0.30
0.50
—
—
—
—
—
—
—
–1.2
Unit
V
V
mA
µA
V
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
Conditions
I
D
= –1 mA, V
GS
= 0 V
I
G
=
±100 µA,
V
DS
= 0 V
V
DS
= –100 V, V
GS
= 0 V
V
GS
=
±16
V, V
DS
= 0 V
I
D
= –1 mA, V
DS
= –10 V
I
D
= –3 A, V
GS
= –10 V
I
D
= –3 A, V
GS
= –4.5 V
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –50 V
I
D
= –3 A
V
GS
= –10 V
R
G
= 25
Ω
I
S
= –3 A, V
GS
= 0 V
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
Page 2 of 6
RJJ1011DPD
Main Characteristics
Power vs. Temperature Derating
50
–100
10
µs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
40
–10
100
µs
30
–1
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
1 shot Pulse
1 ms
PW = 10 ms
20
DC
O
pe
10
–0.1
ra
tio
n
0
50
100
150
200
–0.01
–0.1
–1
–10
–100
–1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–10
–10 V
–4.5 V
–5 V
Typical Transfer Characteristics
–10
V
DS
= –10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
–8
–4 V
–8
–6
–3.6 V
–6
–4
V
GS
= –3 V
Pulse Test
–4
–2
–2
0
0
75°C
25°C
Tc = –25°C
–4
–6
–8
–10
0
–2
–4
–6
–8
–10
–2
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs.Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(Ω)
Pulse Test
Tc = 25°C
0.8
Drain to Source On State Resistance
R
DS(on)
(Ω)
1.0
1
Pulse Test
Tc = 25°C
0.6
I
D
= –6 A
–1 A
V
GS
= –4.5 V
–10 V
0.4
0.2
–3 A
0
2
4
6
8
10
0.1
–0.1
–1
–10
–100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
Page 3 of 6
RJJ1011DPD
Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Drain to Source On State Resistance
R
DS(on)
(Ω)
0.5
Forward Transfer Admittance |yfs| (S)
V
GS
= –10 V
Pulse Test
10
Tc = –25°C
0.4
I
D
= –3 A
25°C
75°C
0.3
1
0.2
0.1
0
–25
0.1
V
DS
= –10 V
Pulse Test
0
25
50
75
100 125 150
–0.1
–1
–10
–100
Case Temperature Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverce Recovery Time
100
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 1 MHz
Ciss
Reverce Recovery Time trr (ns)
Capacitance C (pF)
di/dt = 100 A/
µs
V
GS
= 0 V
Ta = 25°C
1000
100
Coss
Crss
10
–0.1
–1
–10
10
–0.1
–1
–10
–100
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
0
Drain to Source Voltage V
DS
(V)
0
100
Gate to Source Voltage V
GS
(V)
tr
–40
–25 V
–50 V
V
DD
= –80 V
–50 V
–25 V
–4
Switching Time t (ns)
tf
td(off)
–80
V
DD
= –80 V
–8
td(on)
–120
I
D
= –2.3 A
0
4
8
12
16
–12
–160
–16
20
10
–1
V
GS
= –10 V, V
DD
= –50 V
P
W
= 5
µs,
duty
≤
1%
R
G
= 25
Ω
–10
–100
Gate Charge Qg (nc)
Drain Current
I
D
(A)
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
Page 4 of 6
RJJ1011DPD
Reverse Drain Current vs.
Source to Drain Voltage
–5
Avalanche Current vs. Case Temperature
–7
L = 100
µH
Reverse Drain Current I
DR
(A)
Avalanche Current I
AP
(A)
Pulse Test
Tc = 25°C
–6
–5
–4
–3
–2
–1
–0
–4
–5 V
–3
–10 V
–2
V
GS
= 0, 5 V
–1
0
–0.4
–0.8
–1.2
–1.6
–2.0
25
50
75
100
125
150
175
Source to Drain Voltage V
SDF
(V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1shot pulse
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.17°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.01
100
µ
1m
10 m
100 m
1
10
Pulse Width
Switching Time Test Circuit
Vin Monitor
25
Ω
D.U.T.
R
L
V
DD
= –50 V
Vout
Monitor
PW (s)
Switching Time Waveform
Vin
10%
90%
90%
Vout
td(on)
10%
tr
td(off)
90%
10%
tf
Vin
–10 V
REJ03G1623-0200 Rev.2.00 Jun 16, 2008
Page 5 of 6
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