RJJ0621DPP
P Channel Power MOS FET
High Speed Switching
REJ03G1624-0200
Rev.2.00
Jun 16, 2008
Features
•
•
•
•
V
DSS
: –60 V
R
DS(on)
: 56 mΩ (MAX)
I
D
: –25 A
Lead Mount Type (TO-220FN)
Outline
RENESAS Package code: PRSS0003AB-A
(Package name : TO-220FN)
3
1
1. Gate
2. Drain
3. Source
1
2 3
2
Application
•
DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
(Tc = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (Pulsed)*
1
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
AP
P
ch
θch-c
Tch
Tstg
Ratings
–60
+10/–20
–25
–50
–25
35
3.57
–55 to +150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 100
µH
1. Pulse width limited by safe operating area.
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 1 of 6
RJJ0621DPP
Electrical Characteristics
(Tc = 25°C)
Item
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Symbol
V
(BR)DSS
I
DSS
I
GSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
Min.
–60
—
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
–1.7
45
65
1550
190
100
15
25
100
50
–0.9
Max.
—
–1
0.1
–0.1
–2.5
56
95
—
—
—
—
—
—
—
–1.5
Unit
V
µA
µA
µA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
V
Conditions
I
D
= –10 mA, V
GS
= 0 V
V
DS
= –60 V, V
GS
= 0 V
V
GS
= +10 V, V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
I
D
= –1 mA, V
DS
= –10 V
I
D
= –12.5 A, V
GS
= –10 V
I
D
= –12.5 A, V
GS
= –4.5 V
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –30 V
I
D
= –12.5 A
V
GS
= –10 V
R
G
= 25
Ω
I
F
= –12.5 A, V
GS
= 0 V
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 2 of 6
RJJ0621DPP
Main Characteristics
Power vs. Temperature Derating
50
–100
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
0
µ
10
µ
s
Drain Current I
D
(A)
40
–10
PW
s
=
10
1
30
m
s
s
m
–1
DC
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
1 shot Pulse
20
pe
O
t
ra
10
–0.1
io
n
0
50
100
150
200
–0.01
–0.1
–1
–10
–100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–50
–8 V
–7 V
–6 V
–5 V
–4 V
Typical Transfer Characteristics
–30
V
DS
= –10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
–40
–10 V
–20
–30
–20
V
GS
= –3 V
–10
Tc = 75°C
–10
Pulse Test
0
–1
–2
–3
–4
–5
0
0
25°C
–25°C
–3
–4
–5
–1
–2
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs.Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Pulse Test
Tc = 25°C
Drain to Source On State Resistance
R
DS(on)
(mΩ)
150
1000
Pulse Test
Tc = 25°C
100
I
D
= –25 A
100
V
GS
= –4.5 V
–10 V
50
–5 A
–12.5 A
0
–2
–4
–6
–8
–10
10
–1
–10
–100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 3 of 6
RJJ0621DPP
Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
120
100
80
60
40
20
Forward Transfer Admittance |yfs| (S)
V
GS
= –10 V
Pulse Test
I
D
= –25 A
100
Tc = –25°C
10
25°C
75°C
–12.5 A
–5 A
1
0
–25
0.1
V
DS
= –10 V
Pulse Test
0
25
50
75
100 125 150
–0.1
–1
–10
–100
Case Temperature Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverce Recovery Time
1000
Typical Capacitance vs.
Drain to Source Voltage
1000
V
GS
= 0
f = 1 MHz
Ciss
Reverce Recovery Time trr (ns)
100
Capacitance C (pF)
di/dt = –100 A/
µs
V
GS
= 0 V
Tc = 25°C
100
Coss
10
10
Crss
1
–1
–10
–100
1
–1
–10
–100
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
0
Drain to Source Voltage V
DS
(V)
0
–10 V
1000
Gate to Source Voltage V
GS
(V)
I
D
= –25 A
–20
V
DD
= –60 V
–30 V
–10 V
–30 V
–4
Switching Time t (ns)
100
td(off)
tf
tr
td(on)
–40
–8
V
DD
= –60 V
10
V
GS
= –10 V, V
DD
= –30 V
P
W
= 5
µs,
duty
≤
1%
R
G
= 25
Ω
–60
–12
–80
0
8
16
24
32
–16
40
1
–1
–10
–100
Gate Charge Qg (nc)
Drain Current
I
D
(A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 4 of 6
RJJ0621DPP
Reverse Drain Current vs.
Source to Drain Voltage
–30
Avalanche Current vs. Case Temperature
–30
L = 100
µH
Reverse Drain Current I
DR
(A)
Avalanche Current I
AP
(A)
Pulse Test
Tc = 25°C
–25
–20
–15
–10
–5
0
–20
–5 V
–10 V
–10
V
GS
= 0, 5 V
0
–0.4
–0.8
–1.2
–1.6
–2.0
25
50
75
100
125
150
175
Source to Drain Voltage V
SDF
(V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.05
0.1
0.01
1shot pulse
0.02
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 3.57°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.01
100
µ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
25
Ω
D.U.T.
R
L
V
DD
= –30 V
Vout
td(on)
Vout
Monitor
Vin
Switching Time Waveform
10%
90%
90%
10%
90%
10%
td(off)
tf
Vin
–10 V
tr
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 5 of 6
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