HRL0103C
Silicon Schottky Barrier Diode for Rectifying
REJ03G0367-0300
Rev.3.00
Apr 08, 2008
Features
•
Low reverse voltage drop and suitable for high efficiency reverse current.
•
Lineup of environmental friendly Halogen free type (HRL0103C-N)
•
Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Part No.
HRL0103C
HRL0103C-N
(Halogen-free type)
Laser Mark
P
Package Name
EFP
Package Code
PXSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
1
P
2
1. Cathode
2. Anode
REJ03G0367-0300 Rev.3.00 Apr 08, 2008
Page 1 of 5
HRL0103C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward surge current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Symbol
V
RM
*
V
R
I
O
*
1
I
FM
I
FSM
*
2
Tj
Tstg
1
Value
30
30
100
300
1
125
−55
to +125
Unit
V
V
mA
mA
A
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Thermal resistance
Symbol
V
F1
V
F2
I
R1
I
R2
C
Rth(j-a)
Min
—
—
—
—
—
—
Typ
—
—
—
—
—
800
Max
0.40
0.60
0.1
0.2
8.0
—
Unit
V
V
μA
pF
°C/W
Test Condition
I
F
= 10 mA
I
F
= 100 mA
V
R
= 5 V
V
R
= 10 V
V
R
= 0.5 V, f = 1 MHz
Polyimide board *
1
Notes: 1. Polyimide board
20h×15w×0.8t
0.3
3.0
0.5
Unit: mm
1.0
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
REJ03G0367-0300 Rev.3.00 Apr 08, 2008
Page 2 of 5
HRL0103C
Main Characteristic
1.0
Pulse test
10
–1
Ta = 75°C
10
–3
Pulse test
10
–4
Reverse current I
R
(A)
Forward current I
F
(A)
10
–2
10
–5
Ta = 75°C
10
–3
Ta = 25°C
10
–6
Ta = 50°C
10
–4
10
–5
10
–7
Ta = 25°C
10
–6
0
0.2
0.4
0.6
0.8
1.0
10
–8
0
5
10
15
20
25
30
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
0.12
0A
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
0.03
0V
Reverse power dissipation Pd (W)
Forward power dissipation Pd (W)
0.1
t
T
t
D= —
T
D = 1/6
sin
D = 1/3
D = 1/2
DC
0.025
T
Tj = 125°C
t
t
D=—
T
D = 5/6
Ta = 25°C
0.08
0.02
D = 2/3
0.06
0.015
D = 1/2
0.04
0.01
sin
0.02
0.005
0
0
0.05
0.10
0.15
0
0
10
20
30
40
Forward current I
F
(A)
Fig3. Forward power dissipation vs. Forward current
Reverse voltage V
R
(V)
Fig4. Reverse power dissipation vs. Reverse voltage
REJ03G0367-0300 Rev.3.00 Apr 08, 2008
Page 3 of 5
HRL0103C
0.12
Average rectified current I
O
(A)
0.1
V
R
= V
RRM
/2
Tj =125°C
Rth(j-a) = 800°C/W
DC
0.08
D = 1/2
sin(θ = 180°)
D = 1/3
0.06
0.04
D = 1/6
0.02
0
−25
0
25
50
75
100
125
Ambient temperature Ta (
°C
)
Fig.5 Average rectified current vs. Ambient temperature
REJ03G0367-0300 Rev.3.00 Apr 08, 2008
Page 4 of 5
HRL0103C
Package Dimensions
Package Name
EFP
JEITA Package Code
⎯
RENESAS Code
PXSF0002ZA-A
Previous Code
EFP / EFPV
MASS[Typ.]
0.0007g
D
b
E
H
E
c
A
φ
b
e
1
Reference
Symbol
Dimension in Millimeters
Pattern of terminal position areas
A
b
c
D
E
H
E
φ
b
e
1
Min
0.44
0.25
0.08
0.55
0.75
0.95
Nom
0.47
0.30
0.13
0.60
0.80
1.00
0.40
1.00
Max
0.50
0.35
0.18
0.65
0.85
1.05
REJ03G0367-0300 Rev.3.00 Apr 08, 2008
Page 5 of 5
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