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HN58X2408I

产品描述Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
文件大小150KB,共22页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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HN58X2408I概述

Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)

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HN58X2408I/HN58X2416I
HN58X2432I/HN58X2464I
Two-wire serial interface
8k EEPROM (1-kword
×
8-bit)/16k EEPROM (2-kword
×
8-bit)
32k EEPROM (4-kword
×
8-bit)/64k EEPROM (8-kword
×
8-bit)
REJ03C0131-0500
Rev. 5.00
Jan.14.2005
Description
HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 32-byte page programming function to make their write operation faster.
Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as
cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology’s
sales office before using industrial applications such as automotive systems, embedded controllers,
and meters.
Features
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I
2
C
TM
serial bus*
1
)
Clock frequency: 400 kHz
Power dissipation:
Standby: 3
µA
(max)
Active (Read): 1 mA (max)
Active (Write): 3 mA (max)
Automatic page write: 32-byte/page
Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
Endurance: 10
5
Cycles (Page write mode)
Data retention: 10 Years
Rev.5.00, Jan.14.2005, page 1 of 20

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