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MJE18604D2BA

产品描述TRANSISTOR 3 A, 800 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
产品类别分立半导体    晶体管   
文件大小387KB,共61页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJE18604D2BA概述

TRANSISTOR 3 A, 800 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

MJE18604D2BA规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码TO-220AB
包装说明PLASTIC, TO-220AB, 3 PIN
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性BUILT-IN ANTISATURATION NETWORK
外壳连接COLLECTOR
最大集电极电流 (IC)3 A
集电极-发射极最大电压800 V
配置SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)20
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
标称过渡频率 (fT)13 MHz
Base Number Matches1

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18604D2
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network for
1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
Low Base Drive Requirement
High DC Current Gain (30 Typical) @ IC = 400 mA
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCER
Value
800
800
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Breakdown Voltage
Collector–Emitter Sustaining Voltage @ R = 200
Collector–Base Breakdown Voltage
VCBO
VCES
1600
1600
12
3
8
2
4
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
VEBO
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
Base Current
— Peak (1)
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25°C
Operating and Storage Temperature
100
0.8
Watt
W/
_
C
TJ, Tstg
– 65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θJC
R
θJA
TL
1.25
62.5
260
_
C/W
_
C
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Motorola Bipolar Power Transistor Device Data
3–779
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