MJE18604D2BV概述

3A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE18604D2BV规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	TO-220AB
包装说明	PLASTIC, TO-220AB, 3 PIN
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	BUILT-IN ANTISATURATION NETWORK
外壳连接	COLLECTOR
最大集电极电流 (IC)	3 A
集电极-发射极最大电压	800 V
配置	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	20
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
标称过渡频率 (fT)	13 MHz
Base Number Matches	1

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MJE18604D2

Advance Information

High Speed, High Gain Bipolar

NPN Power Transistor with

Integrated Collector-Emitter

Diode and Built-in Efficient

Antisaturation Network for

1600 V Applications

The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make

it ideally suitable for light ballast applications. Therefore, there is no more a need to

guarantee an hfe window.

Main features:

•

Low Base Drive Requirement

•

High DC Current Gain (30 Typical) @ IC = 400 mA

•

Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active

Antisaturation (H2BIP) Structure which Minimizes the Spread

•

Integrated Collector–Emitter Free Wheeling Diode Matched with the Power

Transistor

•

Fully Characterized and Guaranteed Dynamic VCE(sat)

•

“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

POWER TRANSISTORS

3 AMPERES

1600 VOLTS

100 WATTS

CASE 221A–06

TO–220AB

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