Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505DF
DESCRIPTION
・With
TO-220Fa package
・High
voltage,high speed
・With
integrated efficiency diode
APPLICATIONS
・For
horizontal deflection circuits of color
TV receivers.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (peak)
Base current
Base current(peak)
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
5
2.5
4
2
4
20
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
Thermal resistance from junction to ambient
MAX
55
UNIT
K/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505DF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CES
h
FE-1
h
FE-2
V
F
f
T
C
C
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=0.1 A ;I
B
=0;L=25mH
I
E
=600mA ;I
C
=0
I
C
=2A ;I
B
=0.9 A
I
C
=2A ;I
B
=0.9 A
V
CE
=1500V
;
V
BE
=0;
T
C
=125℃
I
C
=0.1A ;V
CE
=5V
I
C
=2A ;V
CE
=5V
I
F
=2A
I
C
=0.1A ;V
CE
=5V
I
E
=0;f=1MHz;V
CB
=10V
7
65
6
2.22
1.8
V
MHz
pF
MIN
700
7.5
13.5
1.0
1.3
0.15
1.0
30
TYP.
MAX
UNIT
V
V
V
V
mA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU505DF
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
嵌入式系统
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