Freescale Semiconductor
Technical Data
Document Number: MRF6S19100N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 950 mA,
P
out
= 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
N Suffix Indicates Lead - Free Terminations
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
200°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S19100NR1
MRF6S19100NBR1
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
287
1.64
- 65 to +175
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
Symbol
R
θJC
Value
(1,2)
0.61
0.65
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S19100NR1 MRF6S19100NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 950 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
—
—
2
2.8
0.24
5.3
3
4
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
13
24
- 47
- 60
—
14.5
25.5
- 37
- 51
- 12
16
36
- 35
- 48
- 10
dB
%
dBc
dBc
dB
MRF6S19100NR1 MRF6S19100NBR1
2
RF Device Data
Freescale Semiconductor
R1
V
BIAS
+
C1
R2
C2
C3
Z5
Z12
RF
INPUT
R3
Z1
C7
Z2
Z3
Z4
Z11
DUT
V
SUPPLY
C9
C10
C11
Z6
Z7
Z8
Z9
C8
Z10
C4
C5
C6
RF
OUTPUT
V
SUPPLY
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″ x 0.084″ Microstrip
0.818″ x 0.084″ Microstrip
0.165″ x 0.386″ Microstrip
0.505″ x 0.800″ Microstrip
0.323″ x 0.040″ Microstrip
0.160″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
0.319″ x 0.880″ Microstrip
0.355″ x 0.215″ Microstrip
0.661″ x 0.084″ Microstrip
1.328″ x 0.120″ Microstrip
Arlon AD250, 0.030″,
ε
r
= 2.5
Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
C1
C2
C3, C7
C4, C8, C9
C5, C6, C10, C11
R1
R2
R3
Description
10
μF,
35 V Tantalum Capacitor
100 nF Chip Capacitor (1206)
5.1 pF 600B Chip Capacitors
9.1 pF 600B Chip Capacitors
10
μF,
50 V Chip Capacitors
1 kΩ, 1/4 W Chip Resistor (1206)
10 kΩ, 1/4 W Chip Resistor (1206)
10
Ω,
1/4 W Chip Resistor (1206)
600B5R1BT250XT
600B9R1BT250XT
GRM55DR61H106KA88L
ATC
ATC
Murata
Part Number
T491D106K035AS
Manufacturer
Kemet
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
3
R2 C2
C3
C4
R1
C1
R3
C5
C6
CUT OUT AREA
C7
C8
C10 C11
MRF6S19100N/NB, Rev. 5
C9
Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout
MRF6S19100NR1 MRF6S19100NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−12
−16
−20
−24
−28
−32
−36
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
−35
−40
1425 mA
I
DQ
= 475 mA
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
15.8
15.7
15.6
G
ps
, POWER GAIN (dB)
15.5
15.4
15.3
15.2
15.1
15
14.9
ACPR
IM3
IRL
G
ps
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 950 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
27
η
D
26.5
26
25.5
25
−30
−36
−42
−48
−54
−60
14.8
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 22 Watts Avg.
15.4
15.3
15.2
G
ps
, POWER GAIN (dB)
15.1
15
14.9
14.8
14.7
14.6
14.5
ACPR
IRL
IM3
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 40 W (Avg.)
I
DQ
= 950 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
36
35.5
35
34.5
34
−25
−30
−35
−40
−45
−50
14.4
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 40 Watts Avg.
17
16
G
ps
, POWER GAIN (dB)
15
14
13
12
11
1
1190 mA
950 mA
710 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1425 mA
−10
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
−40
475 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
−50
710 mA
−60
1
10
950 mA
1190 mA
100
300
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
5
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