Freescale Semiconductor
Technical Data
Document Number: MW6IC2420N
Rev. 1, 4/2008
RF LDMOS Integrated
Power Amplifier
The MW6IC2420NB integrated circuit is designed with on - chip matching
that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
Driver Applications
•
Typical CW Performance at 2450 MHz: V
DD
= 28 Volts, I
DQ1
= 210 mA,
I
DQ2
= 370 mA, P
out
= 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW
P
out
.
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW6IC2420NBR1
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/
V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MW6IC2420NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
in
Value
- 0.5, +68
- 0.5, +6
- 65 to +200
150
225
23
Unit
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W - CDMA Application
(P
out
= 4.5 W Avg.)
Stage 1, 28 Vdc, I
DQ
= 210 mA
Stage 2, 28 Vdc, I
DQ
= 370 mA
Symbol
R
θJC
1.8
1
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak
Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA,
P
out
= 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel
Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
IM3
ACPR
IRL
25.5
13.7
—
—
—
28
15
- 43
- 46
- 15
30
—
- 40
- 43
- 10
dB
%
dBc
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
(continued)
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MW6IC2420NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 20 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Quiescent Current Accuracy over Temperature
with 18 kΩ Gate Feed Resistors ( - 10 to 85°C)
(1)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Average Deviation from Linear Phase in 30 MHz Bandwidth
@ P
out
= 1 W CW
Average Group Delay @ P
out
= 1 W CW Including Output Matching
Part - to - Part Insertion Phase Variation @ P
out
= 1 W CW,
Six Sigma Window
Symbol
VBW
—
30
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA, 2110 - 2170 MHz
ΔI
QT
G
F
Φ
Delay
ΔΦ
—
—
—
—
—
±5
0.2
2
2.8
18
—
—
—
—
—
%
dB
°
ns
°
Table 6. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 110 mA, I
DQ2
= 370 mA, 2110 - 2170 MHz
P
sat
—
60
—
Saturated Pulsed Output Power
(8
μsec(on),
1 msec(off))
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
3
V
DS1
C1
RF
INPUT
1
2
3 NC
4 NC
5
6
DUT
16
NC 15
Z10
14
Z4
Z5
C6 Z6
C7
C8
C2
C11
V
DS2
Z1
C14
V
GS1
Z2
C15
Z3
7 NC
8
9
10
11
Z7
Z8
C9
Z9
C10
RF
OUTPUT
Quiescent Current
Temperature
Compensation
Z11
NC 13
12
C4
C12
R1
V
GS
C3
V
GS2
R2
NC
C5
NC
Z1
Z2
Z3, Z8
Z4
Z5
C13
0.510″
0.300″
0.410″
0.138″
0.086″
x 0.054″
x 0.054″
x 0.054″
x 0.237″
x 0.237″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z6
Z7
Z9
Z10, Z11
PCB
0.189″ x 0.237″ Microstrip
0.127″ x 0.054″ Microstrip
0.182″ x 0.054″ Microstrip
1.073″ x 0.054″ Microstrip
Taconic RF35, 0.020″,
ε
r
= 3.5
Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz
Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values
Part
C1, C2, C3, C4
C5, C13
C6, C7
C8
C9
C10
C11, C12
C14
C15
R1, R2
Description
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μF
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Bourns
Manufacturer
MW6IC2420NBR1
4
RF Device Data
Freescale Semiconductor
V
DS1
V
DS2
C2
C11
MW6IC2420
Rev. 0
C1
C6
C14
C5
C15
C7
C13
C8
C9
C10
C4
C3
V
GS
C12
R1
R2
Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
5
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