Freescale Semiconductor
Technical Data
Document Number: MRF6P21190HR6
Rev. 3, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1900 mA, P
out
= 44 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P21190HR6
2110 - 2170 MHz, 44 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
700
4
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 72°C, 44 W CW
Symbol
R
θJC
Value (1,2)
0.25
0.27
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6P21190HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 1900 mAdc)
Drain- Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
0.1
—
2
2.8
0.21
5.3
3
4
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 44 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurements made with device in push - pull configuration.
G
ps
η
D
IM3
ACPR
IRL
14.5
25
—
—
—
15.5
26.5
- 37
- 40
- 15
17.5
—
- 35
- 38
-9
dB
%
dBc
dBc
dB
MRF6P21190HR6
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C6
R1
C5
+
C4
C3
B2
R2
Z4
RF
INPUT
Z1
Z2
Z3
C7
B3
V
BIAS
+
C12
R3
C11
+
C10
C9
B4
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
0.850″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
1.830″ x 0.067″ Microstrip
0.088″ x 0.067″ Microstrip
0.250″ x 0.067″ Microstrip
0.324″ x 0.178″ Microstrip
0.143″ x 0.655″ Microstrip
0.111″ x 0.655″ Microstrip
0.124″ x 0.712″ Microstrip
Z15, Z16
Z17, Z18
Z19, Z20
Z21
Z22
Z23
Z24
PCB
C8
C1
DUT
Z5
Z7
Z9
Z11
Z13
Z6
Z8
Z10
Z12
C2
Z14
+
C14
C15
+
C19
C16
C17
C18
+
C20
+ V
SUPPLY
C21
Z16
Z18
Z20
C13
Z22
Z23
RF
OUTPUT
Z24
Z15
Z17
Z19
C22
Z21
+
C23
C24
+
C28
C25
C26
C27
+
C29
+ V
SUPPLY
C30
0.289″ x 0.712″ Microstrip
0.127″ x 0.200″ Microstrip
0.288″ x 0.067″ Microstrip
0.088″ x 0.067″ Microstrip
1.830″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
0.850″ x 0.066″ Microstrip
Taconic RF - 35, 0.030″,
ε
r
= 3.5
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part
B1, B2, B3, B4
C1, C7
C2, C8, C15, C24
C3, C9, C18, C27
C4, C10
C5, C11, C17, C26
C6, C12
C13, C22
C14, C19, C20, C23,
C28, C29
C16, C25
C21, C30
R1, R3
R2, R4
RF Beads
30 pF Chip Capacitors
6.8 pF Chip Capacitors
1k pF Chip Capacitors
1
μF,
50 V Tantalum Chip Capacitors
0.1
μF
Chip Capacitors
100
μF,
50 V Electrolytic Capacitors, Radial
43 pF Chip Capacitors
22
μF,
35 V Tantalum Chip Capacitors
0.56
μF
Chip Capacitors (1825)
470
μF,
63 V Electrolytic Capacitors, Radial
1 kW, 1/4 W Chip Resistors (1206)
12
W,
1/4 W Chip Resistors (1206)
Description
Part Number
2743019447
100B300JP500X
100B6R8CP500X
100B102JP50X
T491C105K050AS
CDR33BX104AKWS
MCR50V107M8X11
100B430JP500X
T491X226K035AS
C1825C564J5RAC
MCR63V477M13X26
CRCW12061001F100
CRCW120612R0F100
Manufacturer
Fair- Rite
ATC
ATC
ATC
Kemet
Kemet
Multicomp
ATC
Kemet
Kemet
Multicomp
Vishay
Vishay
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
3
-
+
C6
R1
C5 C4
C3
MRF6P21190
Rev 2
C14
C15
C16
C17
C18
-
C21
C2
R2
B1
B2
C1
C19
C20
C13
+
CUT OUT AREA
C7
R4 B3 B4
C22
C28
C29
+
+
C12
R3
C11
C10
C9
C8
C23
C24
C25
C26
C27
-
-
C30
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
MRF6P21190HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
18
16
G
ps
, POWER GAIN (dB)
14
12
10
8
6
ACPR
4
2080
2100
2120
2140
2160
2180
2200
−50
2220
IRL
−20
IM3
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−30
−40
G
ps
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
η
D
40
30
20
10
−10
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
I
DQ
= 2500 mA
10
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 44 Watts Avg.
20
18
16
G
ps
, POWER GAIN (dB)
14
12
10
8
6
4
2080
ACPR
2100
2120
2140
2160
2180
2200
IRL
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 87 W (Avg.), I
DQ
= 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
50
40
30
20
0
−10
IM3
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−20
−30
−40
2220
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 87 Watts Avg.
17
16.5
G
ps
, POWER GAIN (dB)
2200 mA
16
1900 mA
15.5
1600 mA
15
14.5
14
1
10
100
400
P
out
, OUTPUT POWER (WATTS) PEP
1300 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2500 mA
−30
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
2200 mA
−35
1900 mA
1600 mA
−45
−40
−50
1300 mA
−55
1
100
400
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
5
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