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FQT5N20D84Z: 产品描述Power Field-Effect Transistor, 1A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小632KB，共9页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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FQT5N20D84Z概述

Power Field-Effect Transistor, 1A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

	FQT5N20D84Z	FQT5N20L99Z	FQT5N20S62Z
描述	Power Field-Effect Transistor, 1A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 1A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 1A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
包装说明	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	60 mJ	60 mJ	60 mJ
外壳连接	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V
最大漏极电流 (ID)	1 A	1 A	1 A
最大漏源导通电阻	1.2 Ω	1.2 Ω	1.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
元件数量	1	1	1
端子数量	4	4	4
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	4 A	4 A	4 A
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
Base Number Matches	1	1	1