Freescale Semiconductor
Technical Data
MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration
PCN12895 for more details.
Document Number: MRF6P9220H
Rev. 3, 8/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 1600 mA, P
out
= 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47.1 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Device Designed for Push - Pull Operation Only
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6P9220HR3
880 MHz, 47 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 220 W CW
Case Temperature 76°C, 47 W CW
Symbol
R
θJC
Value
(2,3)
0.25
0.28
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
MRF6P9220HR3
1
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
3B (Minimum)
C (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(4)
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(4)
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 350
μAdc)
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2.2
2.8
0.22
3
4
0.3
Vdc
Vdc
Vdc
Dynamic Characteristics
(1,2)
C
rss
—
2.1
—
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 47 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in push - pull configuration.
Drains are tied together internally as this is a total device value.
G
ps
η
D
ACPR
IRL
18.5
28.5
—
—
20
30
- 47.1
- 14
23
—
- 45
-9
dB
%
dBc
dB
MRF6P9220HR3
2
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
R1
V
BIAS
B1
+
R3
COAX1
C1
C2
C3
Z19
Z8
Z10
Z12
Z14
Z16
C14
C10
Z3
C5
R2
Z7
Z20
C6
Z5
DUT
C11
C12
RF
OUTPUT
Z18
C23
+
C15
C16
+
C18
C17
V
SUPPLY
COAX3
Z6
Z2
RF
INPUT
Z1
C4
Z4
Z9
Z13
Z15
Z17
C13
LIFETIME BUY
COAX2
+
C9
C7
C8
B2
Z11
+
C24
C19
C20
+
COAX4
V
SUPPLY
C21
V
BIAS
C22
Z1, Z18
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
0.401″ x 0.081″ Microstrip
0.563″ x 0.101″ Microstrip
0.416″ x 0.727″ Microstrip
0.058″ x 1.01″ Microstrip
0.191″ x 0.507″ Microstrip
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z19, Z20
PCB
1.054″ x 0.150″ Microstrip
0.225″ x 0.507″ Microstrip
0.440″ x 0.435″ Microstrip
0.123″ x 0.215″ Microstrip
0.165″ x 0.339″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6P9220HR3 Test Circuit Schematic
Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values
Part
Description
Ferrite Beads, Short
1.0
μF,
50 V Tantalum Chip Capacitors
0.1
μF
Chip Capacitors
1000 pF Chip Capacitors
100 pF Chip Capacitors
8.2 pF Chip Capacitors
9.1 pF Chip Capacitor
1.8 pF Chip Capacitor
47
μF,
50 V Electrolytic Capacitors
470
μF,
63 V Electrolytic Capacitors
22 pF Chip Capacitors
50
Ω,
Semi Rigid Coax, 2.40″ Long
10
Ω,
1/4 W Chip Resistors
1.0 kΩ, 1/4 W Chip Resistor
Part Number
2743019447
T491C105K050AT
CDR33BX104AKWT
ATC100B102JP50XT
ATC100B101JP500XT
ATC100B8R2BT500XT
ATC100B9R1BT500XT
ATC100B1R8BT500XT
EMVY500ADA470MF806
EMVY630GTR471MLN0S
ATC100B220FT500XT
UT - 141A - TP
CRCW120610R0FKEA
CRCW12061001FKEA
Manufacturer
Fair - Rite
Kemet
Kemet
ATC
ATC
ATC
ATC
ATC
Nippon Chemi - Con
Nippon Chemi - Con
ATC
Micro - Coax
Vishay
Vishay
B1, B2
C1, C9
C2, C7, C17, C21
C3, C8, C16, C20
C4, C5, C13, C14
C6, C12
C10
C11
C15, C19
C18, C22
C23, C24
Coax1, 2, 3, 4
R1, R2
R3
MRF6P9220HR3
RF Device Data
Freescale Semiconductor
3
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
C1
B1
C3
C15
C18
V
DD
C16
C17
R3
COAX1
COAX3
C4
CUT OUT AREA
C11
C10
C12
C14
C6
C5
LIFETIME BUY
C13
COAX2
COAX4
C20
V
GG
C7
C8
B2
C24
V
DD
C21
C9
R2
C19
C22
Figure 2. MRF6P9220HR3 Test Circuit Component Layout
MRF6P9220HR3
4
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
V
GG
C2
R1
C23
MRF6P9220, Rev. 1
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
21
20.7
20.4
G
ps
, POWER GAIN (dB)
20.1
19.8
19.5
19.2
18.9
18.6
18.3
18
850
ALT1
860
870
880
890
900
IRL
ACPR
V
DD
= 28 Vdc, P
out
= 47 W (Avg.)
I
DQ
= 1600 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
G
ps
η
D
31
30
29
28
27
−45
−50
−55
−60
−65
−70
910
ACPR (dBc), ALT1 (dBc)
−7
−9
−11
−13
−15
−17
f, FREQUENCY (MHz)
LIFETIME BUY
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 47 Watts Avg.
20
19.8
V = 28 Vdc, P
out
= 94 W (Avg.)
19.6
DD
I
DQ
= 1600 mA, N−CDMA IS−95
19.4 (Pilot, Sync, Paging, Traffic Codes
8 Through 13)
19.2
19
18.8
18.6
18.4
18.2
18
850
ALT1
860
870
880
890
900
IRL
ACPR
η
D
42
41
40
39
G
ps
38
−35
−40
−45
−50
−55
−60
910
ACPR (dBc), ALT1 (dBc)
−7
−9
−11
−13
−15
−17
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 94 Watts Avg.
20.5
20
2000 mA
1600 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2400 mA
−10
V
DD
= 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−20
19.5
19
18.5
−30
1200 mA
800 mA
I
DQ
= 800 mA
−40
1200 mA
2400 mA
2000 mA
1600 mA
18
17.5
17
3
10
100
500
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−50
−60
5
10
100
P
out
, OUTPUT POWER (WATTS) PEP
500
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P9220HR3
RF Device Data
Freescale Semiconductor
5
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
G
ps
, POWER GAIN (dB)
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
NXP MCU
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