Freescale Semiconductor
Technical Data
Document Number: MRF5S9150H
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 869
to 960 MHz. Suitable for multicarrier amplifier applications.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 1500 mA, P
out
= 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 28.4%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S9150HR3
MRF5S9150HSR3
880 MHz, 33 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S9150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S9150HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +15
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Case Temperature 76°C, 33 W CW
Symbol
R
θJC
Value
(1)
0.34
0.34
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9150HR3 MRF5S9150HSR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 600
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.15 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
3.1
91.5
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
3
0.1
3
4
0.2
4
5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 33 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
G
ps
η
D
ACPR
IRL
18.5
26.5
—
—
19.7
28.4
- 46.8
- 20
21.5
—
- 45
-9
dB
%
dBc
dB
MRF5S9150HR3 MRF5S9150HSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
+
C14
B1
V
SUPPLY
R2
R1
C16
C17
L1
Z9
C8
C10 Z10 Z11
Z12
Z13
Z14 Z15
Z16
C2
C7
C3
C4
C5
DUT
C9
L3
C11
C12
C13
Z17
C18 C19
L2
RF
OUTPUT
C20
C21
+
C22
C15
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
C6 Z8
V
SUPPLY
+
C23 C24
C25
C26
C27
Z1
Z2
Z3, Z17
Z4
Z5
Z6
Z7
Z8
Z9
0.416″ x 0.080″ Microstrip
0.851″ x 0.080″ Microstrip
0.410″ x 0.080″ Microstrip
0.055″ x 0.220″ Microstrip
0.434″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.630″ Taper
0.077″ x 0.630″ Microstrip
0.221″ x 0.630″ Microstrip
0.193″ x 0.630″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.105″ x 0.630″ Microstrip
0.200″ x 0.630″ x 0.220″ Taper
0.236″ x 0.220″ Microstrip
0.195″ x 0.220″ Microstrip
0.059″ x 0.220″ Microstrip
0.989″ x 0.080″ Microstrip
0.284″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S9150HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S9150HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C2, C17
C3, C12
C4
C5, C6
C7, C8
C9, C10
C11
C13
C14
C15
C16
C18, C23
C19, C20, C21, C24, C25, C26
C22, C27
L1, L2, L3
R1
R2
Description
Small Ferrite Bead
47 pF Chip Capacitors
0.8- 8.0 pF Variable Capacitors, Gigatrim
13 pF Chip Capacitor
15 pF Chip Capacitors
12 pF Chip Capacitors
4.3 pF Chip Capacitors
8.2 pF Chip Capacitor
0.6- 4.5 pF Variable Capacitor, Gigatrim
22 pF Chip Capacitor
1
μF,
50 V Tantalum Capacitor
20K pF Chip Capacitor
180 pF Chip Capacitors
10
μF,
50 V Chip Capacitors (2220)
470
μF,
63 V Electrolytic Capacitors
12.5 nH Inductors
180 kΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447
100B470JP500X
27291SL
100B130JP500X
100B150JP500X
100B120JP500X
100B4R3JP500X
100B8R2JP500X
27271SL
100B220JP500X
T491C105K0J0AS
CDR353P203AK0S
100B181JP500X
GRM55DR61H106KA88B
KME63VB471M12x25LL
A04T
Manufacturer
Fair Rite
ATC
Johanson
ATC
ATC
ATC
ATC
ATC
Johanson
ATC
Kemit
Kemit
ATC
Murata
United Chemi - Con
Coilcraft
MRF5S9150HR3 MRF5S9150HSR3
RF Device Data
Freescale Semiconductor
3
C14
900 MHz
Rev. 3
C16
C15
R2
R1
C17
C5
L1
C1
CUT OUT AREA
C3
C7 C9
L2
L3
C11
C12
C8 C10
C23
C18
C19
C22
B1
C20 C21
C4
C6
C13
C2
C24
C25 C26
C27
Figure 2. MRF5S9150HR3(HSR3) Test Circuit Component Layout
MRF5S9150HR3 MRF5S9150HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
19.6
19.2
G
ps
, POWER GAIN (dB)
18.8
18.4
18
17.6
17.2
16.8
16.4
16
840
850
860
ALT1
ACPR
G
ps
η
D
30
28
26
24
−40
−45
−50
−55
−60
−3
ACPR (dBc), ALT1 (dBc)
−8
−13
−18
−23
−28
IRL
870
880
890
900
910
−65
920
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 33 Watts Avg.
η
D
, DRAIN
EFFICIENCY (%)
−3
ACPR (dBc), ALT1 (dBc)
−8
−13
−18
−23
−28
2250 mA
I
DQ
= 750 mA
−40
−50
1875 mA
−60
1125 mA
−70
1
10
100
400
1
10
100
400
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
1500 mA
19.5
19
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
15.5
15
14.5
840
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
ALT1
ACPR
IRL
V
DD
= 28 Vdc, P
out
= 66 W (Avg.)
I
DQ
= 1500 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
η
D
G
ps
43
41
39
37
35
−35
−40
−45
−50
−55
−60
920
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 66 Watts Avg.
22
21
G
ps
, POWER GAIN (dB)
20
19
1125 mA
18
17
16
750 mA
V
DD
= 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
I
DQ
= 2250 mA
1875 mA
1500 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
−20
−30
V
DD
= 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S9150HR3 MRF5S9150HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
V
DD
= 28 Vdc, P
out
= 33 W (Avg.)
I
DQ
= 1500 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
η
D
, DRAIN
EFFICIENCY (%)
20
32
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