Freescale Semiconductor
Technical Data
Document Number: MRF5S19150H
Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts, I
DQ
=
1400 mA, Avg., P
out
= 32 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50 dB in 30 kHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19150HR3
MRF5S19150HSR3
1930- 1990 MHz, 32 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 0.5, +15
427
2.44
- 65 to +150
150
200
120
0.76
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW
Symbol
R
θJC
Value
(1,2)
0.41
0.44
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19150HR3 MRF5S19150HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1400 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.6 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.1
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.8
0.24
9
3.5
—
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 32 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
13
24
—
—
—
14
26
- 36.5
- 50
- 17
—
—
- 35
- 48
-9
dB
%
dBc
dBc
dB
MRF5S19150HR3 MRF5S19150HSR3
2
RF Device Data
Freescale Semiconductor
+
C9
R1
B1
+
C8
C7
C6
C5
C14
Z11
R3
C17
C18
+
C19
+
C21
+
C20
+
C22
V
SUPPLY
+
C23
V
BIAS
R2
C15
C16
RF
INPUT
Z8
Z1
Z2
C1
Z3
C2
Z4 C4
C3
Z5
Z6
Z7
DUT
Z10
Z13
Z14
C24
Z15
RF
OUTPUT
Z12
Z9
B2
+
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C11
C12
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
R4
C13
C25
C26
C27
+
C32
+
C30
+
C33
+
C31
C28
C29
1.023″ x 0.082″ Microstrip
0.398″ x 0.082″ Microstrip
0.203″ x 0.082″ Microstrip
0.074″ x 0.082″ Microstrip
0.630″ x 0.084″ Microstrip
0.557″ x 1.030″ x 0.237″ Microstrip Taper
0.103″ x 1.030″ Microstrip
1.280″ x 0.046″ Microstrip
1.280″ x 0.046″ Microstrip
0.090″ x 1.055″ Microstrip
1.125″ x 0.068″ Microstrip
1.125″ x 0.068″ Microstrip
0.505″ x 1.055″ Microstrip
0.898″ x 0.105″ Microstrip
1.133″ x 0.082″ Microstrip
Arlon GX0300 - 55- 22, 0.03″,
ε
r
= 2.55
Figure 1. MRF5S19150HR3(SR3) Test Circuit Schematic
Table 5. MRF5S19150HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3
C4, C5, C13, C14, C24, C25
C8, C10
C6, C12, C16, C17, C18, C27, C28, C29
C7, C11, C15, C26
C9
C23
C19, C20, C21, C22, C30, C31, C32, C33
R1
R2
R3, R4
Short RF Beads
0.6 – 4.5 Variable Capacitors, Gigatrim
0.8 pF Chip Capacitor
9.1 pF Chip Capacitors
1.0
μF,
50 V SMT Tantalum Capacitors
0.1
μF
Chip Capacitors
1000 pF Chip Capacitors
100
μF,
50 V Electrolytic Capacitor
470
μF,
63 V Electrolytic Capacitor
22
μF,
35 V Tantalum Capacitors
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
Description
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
3
C17 C18
C9
B1 R3
V
GG
R2
R1
C15
C8
C7
C6
C16
C21 C22
C24
CUT OUT AREA
C5
V
DD
C14
C19 C20 C23
C4
C1
C2
C10
C3
C11
C12
C32 C33
C26
C27
B2
MRF5S19150
Rev 4
R4
C13
C25
C30 C31
C28 C29
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19150HR3(SR3) Test Circuit Component Layout
MRF5S19150HR3 MRF5S19150HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−20
−30
−40
−50
−60
IRL, INPUT RETURN LOSS (dB)
I
DQ
= 2100 mA
1700 mA
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
ACPR
IM3
1.228 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IRL
V
DD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1400 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
G
ps
η
D
40
35
30
25
20
−30
−35
−40
−45
−50
1920
1940
1960
1980
2000
−55
2020
5
1900
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ P
out
= 32 Watts Avg.
16
I
DQ
= 2100 mA
15
G ps , POWER GAIN (dB)
1700 mA
1400 mA
14
1050 mA
13
700 mA
12
11
1
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−15
−20
−25
−30
−35
−40
700 mA
−45
−50
1050 mA
−55
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1400 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
Pout , OUTPUT POWER (dBm)
−30
−35
−40
−45
7th Order
−50
−55
−60
0.1
1
TWO−TONE SPACING (MHz)
10
V
DD
= 28 Vdc, P
out
= 150 W (PEP), I
DQ
= 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
59
58
57
56
55
P1dB = 53.01 dBm (199.99 W)
54
53
52
51
50
49
35
36
37
38
39
V
DD
= 28 Vdc, I
DQ
= 1400 mA
Pulsed CW, 8
μsec
(on), 1 msec (off)
f = 1960 MHz
40
41
42
43
44
45
P3dB = 53.71 dBm (234.96 W)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
5
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