Freescale Semiconductor
Technical Data
Document Number: MRF5P20180HR6
Rev. 1, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1600 mA,
P
out
= 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P20180HR6
1930- 1990 MHz, 38 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 0.5, +15
530
3.0
- 65 to +150
150
200
185
1.2
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 120 W CW
Case Temperature 72°C, 38 W CW
Symbol
R
θJC
Value
(1,2)
0.33
0.35
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5P20180HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 1600 mAdc)
Drain- Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.7
3.6
0.26
5
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 38 W Avg.,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers.
ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
G
ps
η
D
IM3
ACPR
IRL
12.5
23
—
—
—
14
26
- 37.5
- 41
- 16
—
—
- 35
- 38
-9
dB
%
dBc
dBc
dB
MRF5P20180HR6
2
RF Device Data
Freescale Semiconductor
R1
V
BIAS
R2
+
C14
Z17
C10
C8
Z15
Z13
Z19
C6
C12
+
C16
+
C17
+
V
SUPPLY
C20
Z21
C4
Z23
Z7
C2
RF
INPUT
Z1
Z3
Z2
Z4
C1
Z5
Z6
Z9
Z11
DUT
Z24
Z25
RF
OUTPUT
Z8
C3
Z10
Z12
Z16
Z14
R3
V
BIAS
R4
+
C15
Z20
C5
Z18
Z22
C11
C9
C7
C13
+
C18
+
C19
+
V
SUPPLY
C21
Z1
Z2
Z3
Z4
Z5, Z24
Z6, Z23
Z7, Z8
Z9, Z10
0.081″ x 1.126″ Microstrip
0.079″ x 0.138″ Microstrip
0.081″ x 0.091″ Microstrip
0.081″ x 0.117″ Microstrip
0.134″ x 0.874″ Microstrip
0.081″ x 2.269″ Microstrip
0.081″ x 0.118″ Microstrip
0.081″ x 0.079″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z25
PCB
0.341″ x 0.945″ Microstrip
0.035″ x 0.913″ Microstrip
0.581″ x 0.823″ Microstrip
0.059″ x 1.057″ Microstrip
0.081″ x 0.046″ Microstrip
0.081″ x 0.126″ Microstrip
0.081″ x 0.793″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF5P20180HR6 Test Circuit Schematic
Table 5. MRF5P20180HR6 Test Circuit Component Designations and Values
Part
C1
C2, C3, C4, C5, C6, C7
C8, C9
C10, C11, C12, C13
C14, C15, C16, C17, C18, C19
C20, C21
R1, R2, R3, R4
Description
1.8 pF 100B Chip Capacitor
10 pF 100B Chip Capacitors
6.8 pF 100B Chip Capacitors
10 nF 200B Chip Capacitors
22
μF,
35 V Tantalum Capacitors
220
μF,
63 V Electrolytic Capacitors
10 kW Chip Resistors (1206)
Part Number
100B1R8BW
100B100GW
100B6R8CW
200B103MW
TAJE226M035
13668221
Manufacturer
ATC
ATC
ATC
ATC
AVX
Philips
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
3
MRF5P20180
Rev 1
V
GG
R1
R2
C14
C10
C8
C12 C16 C17
C6
V
DD
C20
C2
STRAP
C1
CUT OUT AREA
C4
C3
C5
C21
C9
V
GG
R3
R4
C15
C11
C7
C13 C18 C19
V
DD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5P20180HR6 Test Circuit Component Layout
MRF5P20180HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
−35
2400 mA
IRL, INPUT RETURN LOSS (dB)
15
14
13
G ps , POWER GAIN (dB)
12
11
IRL
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 38 W (Avg.), I
DQ
= 1600 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
40
35
30
25
20
−20
−25
−30
IM3
ACPR
−35
−40
10
9
8
7
6
5
−45
1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
@ P
out
= 38 Watts Avg.
16
15.5
G ps , POWER GAIN (dB)
15
I
DQ
= 2400 mA
2000 mA
1600 mA
1200 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
−45
−50
−55
−60
1
10
100
1000
1
10
100
1000
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
1200 mA
1600 mA
2000 mA
V
DD
= 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
I
DQ
= 800 mA
14.5
14
13.5
13
12.5
12
11.5
11
800 mA
V
DD
= 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
−45
7th Order
−50
−55
−60
0.1
V
DD
= 28 Vdc, P
out
= 180 W (PEP), I
DQ
= 1600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
1
10
100
5th Order
3rd Order
Pout , OUTPUT POWER (dBm)
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
30
Ideal
P3dB = 54 dBm (251 W)
P1dB = 53.5 dBm (224 W)
Actual
V
DD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8
μsec(on),
1 msec(off)
f = 1960 MHz
32
34
36
38
40
42
44
46
TWO−TONE SPACING (MHz)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
5
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