Freescale Semiconductor
Technical Data
Document Number: MRF374A
Rev. 5, 5/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
28/32 volt transmitter equipment.
•
Typical Two - Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — - 32.5 dBc
•
Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW
Output Power
Features
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Characterized with Differential Large - Signal Impedance Parameters
•
RoHS Compliant
MRF374A
470- 860 MHz, 130 W, 32 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F - 04, STYLE 1
NI - 650
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +70
- 0.5, +15
302
1.72
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.58
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M2 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF374A
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μA)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 V, I
D
= 200
μA)
Gate Quiescent Voltage
(2)
(V
DS
= 32 V, I
D
= 100 mA)
Drain - Source On - Voltage
(1)
(V
GS
= 10 V, I
D
= 3 A)
Dynamic Characteristics
(1)
Input Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 130 W PEP, I
DQ
= 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 130 W PEP, I
DQ
= 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 130 W PEP, I
DQ
= 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
C
iss
C
oss
C
rss
—
—
—
97.3
49
1.91
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
2.9
3.3
0.41
4
4.5
0.45
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
70
—
—
—
—
—
—
1
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Characteristics, Narrowband Operation
(2)
(In Freescale MRF374A Narrowband Circuit, 50 ohm system)
G
ps
16
17.3
—
dB
η
36
41.2
—
%
IMD
—
- 32.5
- 28
dB
MRF374A
2
RF Device Data
Freescale Semiconductor
MRF374 Rev 3a
V
GS
R3A
L3A
R2
L4
R4A
C4A
R1A
C9A
C10
C9B
R4B
L3B
L2B
C7B
C13B
L1B
C14B
C11
C12B
C14A
L1A
C12A
L2A
C7A
C13A
V
DD
RF INPUT
C1
C2
RF OUTPUT
C3
C4B
C5
R1B
C6
V
GS
R3B
V
DD
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil "tab"
fits into the main PCB slot" resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 1. MRF374A Narrowband Test Circuit Component Layout
MRF374A
RF Device Data
Freescale Semiconductor
3
Table 5. MRF374A Narrowband Test Circuit Component Layout Designations and Values
Designation
C1
C2
C3
C4A, B, C12A, B
C5
C6
C7A, B, C14A, B
C9A, B
C10
C11
C13A, B
L1A, B
L2A, B
L3A, B
L4
R1A, B
R2
R3A, B
R4A, B
PCB
Balun B1A, B
0.8 pF Chip Capacitor, ATC
2.2 pF Chip Capacitor, ATC
0.5 - 5.0 pF Variable Capacitor, Johanson Gigatrim
47 pF Chip Capacitors, ATC
1.0 pF Chip Capacitor, ATC
10 pF Chip Capacitor, ATC
100,000 pF Chip Capacitors, ATC
15 pF Chip Capacitors, ATC
3.9 pF Chip Capacitor, ATC
5.1 pF Chip Capacitor, ATC
2.2
mF,
100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT
5.0 nH, Coilcraft #A02T
8.0 nH, Coilcraft #A03T
130.0 nH, Coilcraft #132 - 11SMJ
8.8 nH, Coilcraft #1606 - 8
51
W,
1/4 W Chip Resistors, Vishay Dale (1210)
10
W,
1/2 W Chip Resistor, Vishay Dale (2010)
3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206)
180
W,
1/4 W Chip Resistors, Vishay Dale (1210)
MRF374 Printed Circuit Board Rev 03, Rogers RO4350,
Height 30 mils,
ε
r
= 3.48
Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01,
Rogers RO3010, Height 50 mils,
ε
r
= 10.2
Description
MRF374A
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
18
V
DD
= 32 Vdc
17.5
G ps , POWER GAIN (dB)
17
16.5
16
15.5
15
400
P
out
= 100 W (PEP)
I
DQ
= 750 mA
nFrequency
= 6 MHz
500
600
700
800
900
28 Vdc
−15
−20
−25
−30
−35
−40
−45
−50
400
32 Vdc
V
DD
= 28 Vdc
P
out
= 100 W (PEP)
I
DQ
= 750 mA
nFrequency
= 6 MHz
500
600
700
800
900
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 2. Gain versus Frequency
in Broadband Circuit
45
P
out
= 100 W (PEP)
I
DQ
= 750 mA
nFrequency
= 6 MHz
20
G
ps
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
15
Figure 3. Intermodulation Distortion versus
Frequency in Broadband Circuit
40
η
, DRAIN EFFICIENCY (%)
35
V
DD
= 32 Vdc
P
out
= 100 W (PEP)
I
DQ
= 750 mA
nFrequency
= 6 MHz
η
D
35
V
DD
= 28 Vdc
30
32 Vdc
25
10
30
5
IRL
0
400
25
20
400
500
600
700
800
900
f, FREQUENCY (MHz)
500
600
700
800
20
900
f, FREQUENCY (MHz)
Figure 4. Drain Efficiency versus Frequency
in Broadband Circuit
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
Figure 5. Performance in Broadband Circuit
200
C oss , C iss , Capacitance (pF)
20
40
35
30
25
20
15
10
5
0
0.1
1
10
P
out
, OUTPUT POWER (WATTS) AVG.
η
IMR
V
DD
= 32 Vdc
I
DQ
= 1.1 A
f = 860 MHz
2 K Mode COFDM
64 QAM
10.5 Peak/Avg. Ratio
G
ps
η
, DRAIN EFFICIENCY (%)
D
−20
−25
−30
−35
−40
−45
−50
−55
−60
100
IMR, INTERMODULATION (dBc)
40
100
C
iss
10
50
C
oss
C
rss
5
0
0
10
20
30
40
50
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
0
60
C rss , Capacitance (pF)
150
15
Figure 6. Capacitance versus Voltage
Figure 7. COFDM Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
MRF374A
RF Device Data
Freescale Semiconductor
5
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