Freescale Semiconductor
Technical Data
Document Number: MRF372
Rev. 9, 5/2006
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
32 volt transmitter equipment.
•
Typical Narrowband Two - Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — - 35 dBc
•
Typical Broadband Two - Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — - 31 dBc
•
Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Power
Features
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
C
T
J
MRF372R3
MRF372R5
470 - 860 MHz, 180 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Value
- 0.5, +68
- 0.5, +15
17
350
2.0
- 65 to +150
150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.5
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF372R3 MRF372R5
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μA)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 V, I
D
= 200
μA)
Gate Quiescent Voltage
(2)
(V
DS
= 32 V, I
D
= 100 mA)
Drain - Source On - Voltage
(1)
(V
GS
= 10 V, I
D
= 3 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 3 A)
Dynamic Characteristics
(1)
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0 V, f = 1 MHz)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 180 W PEP, I
DQ
= 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
(V
DD
= 32 V, P
out
= 180 W PEP, I
DQ
= 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
C
iss
C
oss
C
rss
—
—
—
260
69
2.5
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2.5
—
—
3
3.5
0.28
2.6
4
4.5
0.45
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
68
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Characteristics, Narrowband Operation
(2)
(In Freescale MRF372 Narrowband Circuit, 50 ohm system)
G
ps
16
17
—
dB
η
33
36
—
%
IMD
—
- 35
- 31
dBc
Typical Characteristics, Broadband Operation
(2)
(In Freescale MRF372 Broadband Circuit, 50 ohm system)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 180 W PEP, I
DQ
= 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
G
ps
—
14.5
—
dB
η
—
37
—
%
IMD
—
- 31
—
dBc
MRF372R3 MRF372R5
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
200
C
iss
150
15
C rss , Capacitance (pF)
20
C oss , C iss , Capacitance (pF)
100
C
oss
50
10
C
rss
5
0
0
10
20
30
40
50
0
60
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: C
iss
does not include input matching capacitance.
Figure 1. Capacitance versus Voltage
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
3
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Table 5. 860 MHz Narrowband DC Bias Networks Component Designations and Values
Balun A, B
PCB
R3A, B
R1A, B, R2A, B
R4A, B, R5A, B
L4A, B
L3A, B
L2A, B
L1A, B
C15
C13
C12A, B
C11
C10A, B
C9
C8A, B
C7A, B
C6
C5A, B
C4A, B, C14A, B
C3A, B
C2
C1
Designation
4
MRF372R3 MRF372R5
V
GG
+
C3
R1
Figure 2. 860 MHz Narrowband DC Bias Networks
R2
L1
Vertical 860 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils,
ε
r
= 10.2
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils,
ε
r
= 3.48
12
Ω,
1/8 W Chip Resistors, Vishay Dale (1206)
180
Ω,
1/4 W Chip Resistors, Vishay Dale (1210)
5.0 nH, Coilcraft #A02T
3.85 nH, Coilcraft #0906 - 4
#24 AWG, 3 Turns Loose, Fair Rite #2643706001
130 nH, Coilcraft #132 - 11SM
1.2 pF Chip Capacitor, ATC
3.9 pF Chip Capacitor, ATC
0.01
mF,
100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT
5.1 pF Chip Capacitor, ATC
2.2
mF,
100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT
10.0 pF Chip Capacitor, ATC
1.0
mF,
100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT
2.7 pF Chip Capacitors, ATC
10.0 pF Chip Capacitor, ATC
100 pF Chip Capacitors, ATC
47.0 pF Chip Capacitors, ATC
22
mF,
22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
0.5 — 5.0 pF Variable Capacitor, Johansen Gigatrim
2.2 pF Chip Capacitor, ATC
L2
C5
C8
L3
GATE
C7
R3
DRAIN
L4
Description
R4
R5
C12
C10
RF Device Data
Freescale Semiconductor
V
DD
R2A
R1A
C5A
L1A
C3A
C4A
L2A
C8A
L3A
R3A
C6
C1
C2
C4B
R3B
C3B
R1B
R2B
L1B
L2B
C5B
L3B
C7B
C9
R4B
L4B
C11
R5B
C12B
C10B
MRF372
Rev 1a
C13
C14B
C7A
C10A
C12A
R4A
R5A
L4A
C14A
C15
C8B
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil "tab"
fits into the main PCB slot" resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 3. 860 MHz Narrowband Component Layout
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
5
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