Freescale Semiconductor
Technical Data
Document Number: MRF284
Rev. 17, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN - PCS/cellular radio
and wireless local loop.
•
Specified Two - Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = - 29 dBc
•
Typical Single - Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
MRF284LR1
MRF284LSR1
2000 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF284LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF284LSR1
Value
- 0.5, +65
±
20
87.5
0.5
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.0
Unit
°C/W
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0)
Gate - Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1.0
10
Vdc
μAdc
μAdc
(continued)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Symbol
Min
Typ
Max
Unit
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF284LR1 MRF284LSR1
1
RF Device Data
Freescale Semiconductor
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 200 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.0 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1.0 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Functional Tests
(in Freescale Test Fixture, 50 ohm system)
Common - Source Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz)
G
ps
9
10.5
—
dB
C
iss
C
oss
C
rss
—
—
—
43
23
1.4
—
—
—
pF
pF
pF
V
GS(th)
V
GS(q)
V
DS(on)
g
fs
2.0
3.0
—
—
3.0
4.0
0.3
1.5
4.0
5.0
0.6
—
Vdc
Vdc
Vdc
S
Symbol
Min
Typ
Max
Unit
η
30
35
—
%
IMD
—
- 32
- 29
dBc
IRL
—
- 15
-9
dB
G
ps
9
10.4
—
dB
η
—
35
—
%
IMD
—
- 34
—
dBc
IRL
—
- 15
-9
dB
G
ps
8.5
9.5
—
dB
η
35
45
—
%
MRF284LR1 MRF284LSR1
2
RF Device Data
Freescale Semiconductor
V
GG
+
C3
R1
W1
C4
R2
R3
R5
R6
W2
C12
R7
W3
C14
V
DD
+
C17
+
C18
B1
C6
R4
B2
C7
C15
C13
B3
L1
Z10
RF
INPUT
Z1
Z2
C1
Z3
C2
C5
Z4
Z5
Z6
Z7
C8
Z8
C9
DUT
Z9
C10
Z11
Z12
Z13
C11
L2
L3
RF
OUTPUT
Z14
Z15
C16
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.530″ x 0.080″ Microstrip
0.255″ x 0.080″ Microstrip
0.600″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.015″ x 0.325″ Microstrip
0.085″ x 0.325″ Microstrip
0.165″ x 0.325″ Microstrip
0.110″ x 0.515″ Microstrip
0.095″ x 0.515″ Microstrip
0.050″ x 0.515″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.155″ x 0.515″ Microstrip
0.120″ x 0.325″ Microstrip
0.150″ x 0.325″ Microstrip
0.010″ x 0.325″ Microstrip
0.505″ x 0.080″ Microstrip
0.865″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic
Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
Designators
B1 - B3
C1, C2, C8
C3, C17
C4, C14
C5
C6, C12
C7, C13
C9
C10
C11
C15, C16
C18
L1, L2
L3
R1, R2, R3, R5, R6, R7
R4
W1, W2, W3
WS1, WS2
Description
Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B
0.8 - 8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL
22
mF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
0.1
mF
Chip Capacitors, Kemet #CDR33BX104AKWS
220 pF Chip Capacitor, ATC #100B221KP500X
1000 pF Chip Capacitors, ATC #100B102JCA50X
5.1 pF Chip Capacitors, ATC #100B5R1CCA500X
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
2.7 pF Chip Capacitor, ATC #100B2R7CCA500X
0.6 - 4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL
200 pF Chip Capacitors, ATC #100B201KP500X
10
mF,
35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T - 5
2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T - 5
12
Ω,
1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
Solid Copper Buss Wire, 16 AWG
Beryllium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
3
C4
R1
W1
B1
R2
C6
C12
W2
C14
W3
R6
R7
C17
R3
R4
B3
R5
B2
C3
C7
L1
C5
WS1
WS2
C9
C10
L2
C13
C18
C15
C16
L3
C1
C2
C8
C11
MRF284
Rev - 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
MRF284LR1 MRF284LSR1
4
RF Device Data
Freescale Semiconductor
V
SUPPLY
+
R1
R3
P1
Q1
R2
R4
Q2
R5
R6
+
C9
C7 R7
C8
R8
C2
C4
C11
C13
R9
C10
R10
R11
C15
C16
V
DD
C1
B3
B1
B2
+
B4
B5
V
DD
L4
RF
OUTPUT
L1
RF
INPUT
Z1
Z2
Z3
C3
L2
C5
Z4
Z5
L3
Z6
Z7
Z8
Z9
DUT
Z10
Z11
Z12
Z13
Z14
C14
Z15
Z16
C12
C6
C17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.363″ x 0.080″ Microstrip
0.080″ x 0.080″ Microstrip
0.916″ x 0.080″ Microstrip
0.517″ x 0.080″ Microstrip
0.050″ x 0.325″ Microstrip
0.050″ x 0.325″ Microstrip
0.071″ x 0.325″ Microstrip
0.125″ x 0.325″ Microstrip
0.210″ x 0.515″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.210″ x 0.515″ Microstrip
0.235″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.510″ x 0.080″ Microstrip
0.990″ x 0.080″ Microstrip
0.390″ x 0.080″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 3. 2000 MHz Class A Test Circuit Schematic
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
5
PCB设计
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