Freescale Semiconductor
Technical Data
Document Number: MRF21010
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
•
Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
•
Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,
10 Watts CW Output Power
Features
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
•
RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
MRF21010LR1
MRF21010LSR1
2110 - 2170 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF21010LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF21010LSR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
43.75
0.25
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
5.5
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21010LR1 MRF21010LSR1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μA)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50
μA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 100 mA)
Drain- Source On - Voltage
(V
GS
= 10 V, I
D
= 0.5 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 1 A)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 100 mA, f = 2170 MHz)
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz)
G
ps
12
13.5
—
dB
C
rss
—
1
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
2.5
—
—
3
4
0.4
0.95
4
4.5
0.5
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
η
31
35
—
%
IMD
—
- 35
- 30
dBc
IRL
—
- 12
- 10
dB
P1dB
G
ps
—
—
11
12
—
—
W
dB
η
—
42
—
%
MRF21010LR1 MRF21010LSR1
2
RF Device Data
Freescale Semiconductor
V
GG
+
C3
R1
R2
C6
C4
C5
Z4
Z5
C7
+
C8
+
C9
V
DD
RF
INPUT
DUT
Z1
Z2
C2
C1
Z3
Z6
Z7
C10
Z8
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
0.964″ x 0.087″ Microstrip
0.905″ x 0.087″ Microstrip
0.433″ x 0.512″ Microstrip
1.068″ x 0.087″ Microstrip
0.752″ x 0.087″ Microstrip
Z6
Z7
Z8
PCB
0.453″ x 1.118″ Microstrip
0.921″ x 0.154″ Microstrip
0.925″ x 0.087″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF21010L Test Circuit Schematic
Table 5. MRF21010L Test Circuit Component Designations and Values
Part
C1 *
C2
C3, C9
C4, C7
C5, C6
C8
C10
N1, N2
R1
R2
(eared)
(earless)
Description
2.2 pF Chip Capacitor
1.8 pF Chip Capacitor
0.5 pF Chip Capacitor
10
μF,
35 V Tantalum Chip Capacitors
1 nF Chip Capacitors
5.6 pF Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
10 pF Chip Capacitor
Type N Connector Flange Mounts
1.0 kW Chip Resistor (0805)
12
W
Chip Resistor (0805)
100B100GW
3052- 1648- 10
ATC
Macom
Part Number
100B2R2BW
100B1R8BW
100B0R5BW
293D106X9035D2T
100B102JW
100B5R6BW
Manufacturer
ATC
ATC
ATC
Sprague- Vishay
ATC
ATC
* Piece part depending on eared / earless version of the device.
C8
VGG
C3
R1
R2
C4 C5
C6 C7
C9
VDD
RF Input
C2
C1
C10
RF Output
CUTOUT AREA
MRF21010
C−XM−00−001−01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
Figure 2. MRF21010L Test Circuit Component Layout
MRF21010LR1 MRF21010LSR1
RF Device Data
Freescale Semiconductor
3
VGG
V DD
Ground
C1
R2
R1
T1
R3
C6
T2
P1
C4 C5
R4
C2
C3
C7
C10
R6
R5
C8
L1
L2
L3
L4
C9
L5
MRF21010
C−XM−99−001−01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
Figure 3. MRF21010L Demonstration Board Component Layout
Table 6. MRF21010L Demonstration Board Component Designations and Values
Designators
C1
C2, C6
C3, C4
C5
C7
C8, C10
C9
L1
L2
L3
L4
L5
R1, R6
R2, R3
R4
R5
P1
T1
T2
PCB
Description
1
mF
Chip Capacitor (0805), AVX #08053G105ZATEA
10
mF,
35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D
6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT
10 nF Chip Capacitor (0805), AVX #08055C103KATDA
1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT
0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT
10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT
19 mm
×
1.07 mm
7.7 mm
×
13.8 mm
9.3 mm
×
22 mm
17.7 mm
×
3.5 mm
3.4 mm
×
1.5 mm
10
W,
1/8 W Chip Resistors (0805)
1 kW, 1/8 W Chip Resistors (0805)
2.2 kW, 1/8 W Chip Resistor (0805)
0
W,
1/8 W Chip Resistor (0805)
5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W
Voltage Regulator, Micro - 8, #LP2951
Bipolar NPN Transistor, SOT - 23, #BC847
Rogers RO4350, 0.5 mm,
ε
r
= 3.53
MRF21010LR1 MRF21010LSR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
35
30
25
20
15
10
5
0
2000
2080
2140
2110
2170
f, FREQUENCY (MHz)
2200
G
ps
IMD
IRL
V
DD
= 28 Vdc, P
out
= 10 W (PEP), I
DQ
= 100 mA
Two Tone Measurement, 100 kHz Tone Spacing
η
0
−5
−10
−15
−20
−25
−30
−35
−40
2280
30
V
DD
= 28 Vdc, I
DQ
= 130 mA, f = 2140 MHz
Channel Spacing 5 MHz, BW 4.096 MHz
25 (15 Channels)
η
G
ps
−10
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−20
20
−30
15
−40
10
ACPR
−50
−60
3.5
5
0.5
2
1.5
2.5
3
P
out
, OUTPUT POWER (WATTS Avg.) W−CDMA
1
Figure 4. Class AB Broadband Circuit Performance
Figure 5. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
−45
−50
−55
−60
0.1
1
130 mA
80 mA
100 mA
150 mA
V
DD
= 28 Vdc, f = 2140 MHz
Two Tone Measurement,
100 kHz Tone Spacing
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0.1
1
10
100
7th Order
5th Order
V
DD
= 28 Vdc, I
DQ
= 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
3rd Order
10
100
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
14.5
V
DD
= 28 Vdc, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
14.0
G ps , POWER GAIN (dB)
150 mA
13.5
130 mA
100 mA
13.0
80 mA
G ps , POWER GAIN (dB)
15
P
out
= 10 W (PEP), I
DQ
= 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
−30
−32
−34
G
ps
−36
−38
IMD
−40
14
13
12.5
12.0
0.1
1
10
100
12
22
P
out
, OUTPUT POWER (WATTS) PEP
26
28
30
V
DD
, DRAIN VOLTAGE (VOLTS)
−42
32
Figure 8. Power Gain versus Output Power
Figure 9. Intermodulation and Gain versus Supply
Voltage
MRF21010LR1 MRF21010LSR1
RF Device Data
Freescale Semiconductor
5
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