Freescale Semiconductor
Technical Data
Document Number: MRF6V2300N
Rev. 3, 1/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
•
Typical CW Performance: V
DD
= 50 Volts, I
DQ
= 900 mA,
P
out
= 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
200°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2300NR1
MRF6V2300NBR1
10 - 600 MHz, 300 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE - ENDED
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +110
- 0.5, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
©
Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
MRF6V2300NR1 MRF6V2300NBR1
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Symbol
R
θJC
Value
(1,2)
0.24
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Drain- Source Breakdown Voltage
(I
D
= 150 mA, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Power Gain
Drain Efficiency
Input Return Loss
C
rss
C
oss
C
iss
—
—
—
2.88
120
268
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.63
2.6
0.28
3
3.5
—
Vdc
Vdc
Vdc
I
DSS
I
DSS
V
(BR)DSS
I
GSS
—
—
110
—
—
—
—
—
2.5
50
—
10
mA
μAdc
Vdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 900 mA, P
out
= 300 W, f = 220 MHz, CW
G
ps
η
D
IRL
24
66
—
25.5
68
- 16
27
—
-9
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V2300NR1 MRF6V2300NBR1
2
RF Device Data
Freescale Semiconductor
B3
B1
V
BIAS
+
C1
+
C2
+
C3
C4
C5
C6
C7
R1
B2
L2
C17
C18
C19
+
C20
V
SUPPLY
L1
C8
RF
INPUT
C9
C10 C11 R2
Z3
Z4
Z5
R3
Z6
C14
C15
C16
RF
OUTPUT
Z7
Z8
Z9
Z10
C23
C21
C22
Z11
Z1
C12
Z2
C13
DUT
Z1
Z2
Z3
Z4
Z5
Z6, Z7
0.352″ x 0.082″ Microstrip
1.567″ x 0.082″ Microstrip
0.857″ x 0.082″ Microstrip
0.276″ x 0.220″ Microstrip
0.434″ x 0.220″ Microstrip
0.298″ x 0.630″ Microstrip
Z8
Z9
Z10
Z11
PCB
0.085″ x 0.170″ Microstrip
2.275″ x 0.170″ Microstrip
0.945″ x 0.170″ Microstrip
0.443″ x 0.082″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″,
ε
r
= 2.55
Figure 2. MRF6V2300NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values
Part
B1, B2
B3
C1
C2
C3
C4, C19
C5, C18
C6, C11, C17
C7, C8, C15, C16
C10
C9, C12, C14, C23
C13
C20
C21
C22
L1
L2
R1
R2, R3
Description
95
Ω,
100 MHz Long Ferrite Beads, Surface Mount
47
Ω,
100 MHz Short Ferrite Bead, Surface Mount
47
μF,
50 V Electrolytic Capacitor
22
μF,
35 V Tantalum Capacitor
10
μF,
35 V Tantalum Capacitor
10 K pF Chip Capacitors
20 K pF Chip Capacitors
0.1
μF,
50 V Chip Capacitors
2.2
μF,
50 V Chip Capacitors
220 nF Chip Capacitor
1000 pF Chip Capacitors
82 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
24 pF Chip Capacitor
39 pF Chip Capacitor
4 Turn #18 AWG, 0.18” ID
82 nH Inductor
270
Ω,
1/4 W Chip Resistor
4.75
Ω,
1/4 W Chip Resistors
Part Number
2743021447
2743019447
476KXM063M
T494X226K035AT
T491D106K035AT
ATC200B103KT50XT
ATC200B203KT50XT
CDR33BX104AKYS
C1825C225J5RAC
C1206C224Z5VAC
ATC100B102JT50XT
ATC100B820JT500XT
477KXM063M
ATC100B240JT500XT
ATC100B390JT500XT
None
1812SMS- 82NJ
CRCW12062700FKTA
CRCW12064R75FKTA
Manufacturer
Fair- Rite
Fair- Rite
Illinois Capacitor
Kemet
Kemet
ATC
ATC
AVX
Kemet
Kemet
ATC
ATC
Illinois Capacitor
ATC
ATC
None
Coilcraft
Vishay
Vishay
MRF6V2300NR1 MRF6V2300NBR1
RF Device Data
Freescale Semiconductor
3
C1
C2
C3
+
B1
C4
C5
C6
R1
C10
C11
C9
B2
C8
C15*
C16*
L2
C19
C18
C17
B3
+
C20
C7
C12
R2 R3
C14
L1
C23
CUT OUT AREA
C13
C22
C21
MRF6V2300N/NB
Rev. 3
* Stacked
Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout
MRF6V2300NR1 MRF6V2300NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
C
iss
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
10
C
rss
I
D
, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
100
100
10
T
C
= 25°C
1
0
10
20
30
40
50
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
1
1
10
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
100
Figure 4. Capacitance versus Drain - Source Voltage
10
9
I
D
, DRAIN CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
2.25 V
22
10
2.63 V
2.5 V
2.75 V
G
ps
, POWER GAIN (dB)
V
GS
= 3 V
28
27
Figure 5. DC Safe Operating Area
I
DQ
= 1350 mA
1125 mA
26
25
900 mA
650 mA
24
23
450 mA
V
DD
= 50 Vdc
f1 = 220 MHz
100
P
out
, OUTPUT POWER (WATTS) CW
600
Figure 6. DC Drain Current versus Drain Voltage
−15
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
60
Figure 7. CW Power Gain versus Output Power
V
DD
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
−20 Two−Tone Measurements, 100 kHz Tone Spacing
P
out
, OUTPUT POWER (dBm)
58
P3dB = 55.76 dBm (377 W)
Ideal
−25
−30
−35
650 mA
−40
−45
−50
1350 mA
−55
1
10
100
600
P
out
, OUTPUT POWER (WATTS) PEP
1125 mA
I
DQ
= 450 mA
900 mA
P1dB = 55.04 dBm (319 W)
56
Actual
54
52
50
24
V
DD
= 50 Vdc, I
DQ
= 900 mA
f = 220 MHz
26
28
30
32
34
P
in
, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V2300NR1 MRF6V2300NBR1
RF Device Data
Freescale Semiconductor
5
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