Freescale Semiconductor
Technical Data
MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
Document Number: MRF6S9130H
Rev. 5, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
= 27 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 48.1 dBc in 30 kHz Bandwidth
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 950 mA, P
out
=
130 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 18 dB
Drain Efficiency — 63%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 950 mA,
P
out
= 56 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 18.5 dB
Drain Efficiency — 44%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 1.5% rms
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Symbol
R
θJC
MRF6S9130HR3
MRF6S9130HSR3
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9130HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9130HSR3
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Value
(2,3)
0.45
0.51
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6S9130HR3 MRF6S9130HSR3
1
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2.1
2.9
0.22
3
4
0.5
Vdc
Vdc
Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.74 Adc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Dynamic Characteristics
(1)
C
oss
C
rss
—
—
66
1.6
—
—
pF
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
η
D
ACPR
IRL
18
29
—
—
19.2
30.5
- 48.1
- 30
21
—
- 46
-9
dB
%
dBc
dB
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA,
P
out
= 56 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
18.5
44
1.5
- 63
- 75
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 130 W,
921 MHz<Frequency<960 MHz
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
(f = 940 MHz)
1. Part is internally matched on input.
G
ps
η
D
IRL
P1dB
—
—
—
—
18
63
- 12
135
—
—
—
—
dB
%
dB
W
MRF6S9130HR3 MRF6S9130HSR3
2
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
B2
V
BIAS
+
C7
RF
INPUT
C6
B1
L2
L1
Z4
Z5
Z6
Z7
Z8
C8
C9
C10
C11
Z9
Z10 Z11 Z12
Z13
+
+
+
+
V
SUPPLY
C14 C15 C16 C17 C18 C19
RF
OUTPUT
Z14 Z15
Z16
C13
C12
Z17
Z1
C1
Z2
Z3
C2
Z1
Z2
Z3
Z4
Z5
Z6, Z11
C3
C4
Z7
Z8
Z9
Z10
Z12
Z13
C5
DUT
0.383″ x 0.080″ Microstrip
1.250″ x 0.080″ Microstrip
0.190″ x 0.220″ Microstrip
0.127″ x 0.220″ Microstrip
0.173″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.620″ Taper
0.220″ x 0.630″ Microstrip
0.077″ x 0.630″ Microstrip
0.146″ x 0.630″ Microstrip
0.152″ x 0.630″ Microstrip
0.184″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
Z14
Z15
Z16
Z17
PCB
0.045″ x 0.220″ Microstrip
0.755″ x 0.080″ Microstrip
0.496″ x 0.080″ Microstrip
0.384″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22,
0.030″,
ε
r
= 2.55
Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Ferrite Beads, Short
47 pF Chip Capacitors
8.2 pF Chip Capacitor
0.8- 8.0 pF Variable Capacitors, Gigatrim
12 pF Chip Capacitors
20 K pF Chip Capacitor
10
μF,
35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
11 pF Chip Capacitor
0.6- 4.5 pF Variable Capacitor, Gigatrim
0.56
μF,
50 V Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
12.5 nH Inductors
Part Number
2743019447
ATC100B470JT500XT
ATC100B8R2BT500XT
27291SL
ATC100B120JT500XT
ATC200B203KT50XT
T491D106K035AT
ATC100B7R5JT500XT
ATC100B110JT500XT
27271SL
C1825C564J5GAC
EKME630ELL471MK25S
A04T- 5
Manufacturer
Fair Rite
ATC
ATC
Johanson
ATC
ATC
Kemet
ATC
ATC
Johanson
Kemet
United Chemi - Con
Coilcraft
B1, B2
C1, C13, C14
C2
C3, C11
C4, C5
C6
C7, C16, C17, C18
C8, C9
C10
C12
C15
C19
L1, L2
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
3
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
C19
B2
C7
C6
C16 C17 C18
B1
C4
L1
C8
L2
C15
C14
900 MHz
Rev 02
C10
C1
CUT OUT AREA
C2
C3
C5
C12
C9
C11
C13
Figure 2. MRF6S9130HR3(SR3) Test Circuit Component Layout
MRF6S9130HR3 MRF6S9130HSR3
4
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
TYPICAL CHARACTERISTICS
20
19.5
19
G
ps
, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
15.5
15
840
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
ACPR
η
D
G
ps
IRL
V
DD
= 28 Vdc, P
out
= 27 W (Avg.)
I
DQ
= 950 mA, N−CDMA IS−95 Pilot, Sync,
Paging, Traffic Codes 8 Through 13
34
32
30
28
26
−44
ACPR (dBc)
−46
−48
−50
−52
−54
920
η
D
, DRAIN
EFFICIENCY (%)
−5
−15
−25
−35
−45
−55
LIFETIME BUY
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
out
= 27 Watts Avg.
20
19.5
19
G
ps
, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16 ACPR
15.5
15
840
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
η
D
G
ps
IRL
V
DD
= 28 Vdc, P
out
= 54 W (Avg.)
I
DQ
= 950 mA, N−CDMA IS−95 Pilot, Sync
Paging, Traffic Codes 8 Through 13
47
44
41
38
35
−34
−36
−38
−40
−42
−44
920
ACPR (dBc)
η
D
, DRAIN
EFFICIENCY (%)
−5
−10
−15
−20
−25
−30
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
= 54 Watts Avg.
20
1100 mA
950 mA
18
700 mA
17
500 mA
16
V
DD
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
15
1
10
100
400
P
out
, OUTPUT POWER (WATTS) PEP
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1400 mA
19
−10
V
DD
= 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
I
DQ
= 500 mA
700 mA
−40
−50
1100 mA
−60
1
10
950 mA
100
1400 mA
400
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
5
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
