Freescale Semiconductor
Technical Data
MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
Document Number: MRF6S9160H
Rev. 2, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 1200 mA, P
out
= 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 76 Watts Avg., Full Frequency Band (865 - 895 MHz)
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA, P
out
=
160 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 58%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
MRF6S9160HR3
MRF6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9160HSR3
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
Symbol
R
θJC
Value
(2,3)
0.31
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
MRF6S9160HR3 MRF6S9160HSR3
1
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 525
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
3
0.2
3
4
0.3
Vdc
Vdc
Vdc
Dynamic Characteristics
(1)
C
oss
C
rss
—
—
80.2
2.2
—
—
pF
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 35 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
η
D
ACPR
IRL
20
29
—
—
20.9
30.5
- 46.8
- 17
23
—
- 45
-9
dB
%
dBc
dB
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA,
P
out
= 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
45
2
- 66
- 75
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 160 W,
921 MHz<Frequency<960 MHz
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
(f = 940 MHz)
1. Part is internally matched on input.
G
ps
η
D
IRL
P1dB
—
—
—
—
20
58
- 12
160
—
—
—
—
dB
%
dB
W
MRF6S9160HR3 MRF6S9160HSR3
2
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
B2
V
BIAS
+
C16 C17
C18
C19
C7
L1
RF
INPUT Z1
C1
C3
C4
C6
DUT
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C8
C10
C11
C12
C13
C14
C15
Z9
Z10
C9
Z11 Z12
Z13
Z14
Z15
Z16 Z17
Z18
C2
Z19
B1
R2
+
R1
C20
L2
C21
C22 C23 C24
V
SUPPLY
RF
OUTPUT
LIFETIME BUY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.426″
0.813″
0.471″
0.319″
0.171″
0.200″
0.742″
0.233″
0.128″
0.134″
x 0.080″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.425″
x 0.630″
x 0.630″
x 0.630″
x 0.630″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.630″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.066″ x 0.630″ Microstrip
0.630″ x 0.425″ x 0.220″ Taper
0.120″ x 0.220″ Microstrip
0.292″ x 0.220″ Microstrip
0.023″ x 0.220″ Microstrip
0.030″ x 0.220″ Microstrip
0.846″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
0.434″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Ferrite Beads, Small
47 pF Chip Capacitors
0.8 - 8.0 pF Variable Capacitors, Gigatrim
2.7 pF Chip Capacitor
15 pF Chip Capacitors
12 pF Chip Capacitors
4.3 pF Chip Capacitors
8.2 pF Chip Capacitor
3.9 pF Chip Capacitors
0.6 - 4.5 pF Variable Capacitor, Gigatrim
22 pF Chip Capacitor
1
μF,
50 V Tantalum Capacitor
20K pF Chip Capacitor
180 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
10 nH Inductors
180
Ω,
1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447
ATC100B470JT500XT
27291SL
ATC100B2R7JT500XT
ATC100B150JT500XT
ATC100B120JT500XT
ATC100B4R3JT500XT
ATC100B8R2JT500XT
ATC100B3R9JT500XT
27271SL
ATC100B220JT500XT
T491C105K0J0AT
CDR35BP203AKYS
ATC100B181JT500XT
GRM55DR61H106KA88B
EKME630ELL471MK25S
0603HC
CRCW12061800FKEA
CRCW120610R0FKEA
Manufacturer
Fair Rite
ATC
Johanson
ATC
ATC
ATC
ATC
ATC
ATC
Johanson
ATC
Kemit
Kemit
ATC
Murata
United Chemi - Con
Coilcraft
Vishay
Vishay
B1, B2
C1, C2, C19
C3, C11
C4
C5, C6
C7, C8
C9, C10
C12
C13, C14
C15
C16
C17
C18
C20
C21, C22, C23
C24
L1, L2
R1
R2
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
3
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
C16
B1
900 MHz
Rev. 2
C18
R2
B2
C24
C17
C21
C22 C23
R1
C19
C20
L1
C5
C7 C9
L2
C14
C1
CUT OUT AREA
C2
C3
C4
C6
C12 C13
C8 C10 C11
C15
Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout
MRF6S9160HR3 MRF6S9160HSR3
4
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
TYPICAL CHARACTERISTICS
20.9
20.6
20.3
G
ps
, POWER GAIN (dB)
20
19.7
19.4
19.1
18.8
18.5
18.2
17.9
840
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
ALT1
ACPR
IRL
V
DD
= 28 Vdc, P
out
= 35 W (Avg.)
I
DQ
= 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
η
D
G
ps
32
30
28
26
24
−40
−45
−50
−55
−60
−65
920
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−5
−8
−11
−14
−17
−20
LIFETIME BUY
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 35 Watts Avg.
20.3
20
19.7
G
ps
, POWER GAIN (dB)
19.4
19.1
18.8
18.5
18.2
17.9
17.6
17.3
840
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
ALT1
ACPR
IRL
V
DD
= 28 Vdc, P
out
= 70 W (Avg.)
I
DQ
= 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
η
D
G
ps
44
42
40
38
36
−30
−36
−42
−48
−54
−60
920
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−3
−6
−9
−12
−15
−18
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 70 Watts Avg.
23
22
I
DQ
= 1800 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
1500 mA
−10
−20
−30
I
DQ
= 600 mA
−40
900 mA
−50
−60
−70
1
10
100
400
1
10
100
400
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
1500 mA
1200 mA
1800 mA
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
15
600 mA
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
1200 mA
900 mA
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
5
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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