Freescale Semiconductor
Technical Data
MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device
Migration PCN12895 for more details.
Document Number: MRF6S9125N
Rev. 5, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
950 mA, P
out
= 27 Watt Avg., Full Frequency Band (865 - 960 MHz), IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 60 Watts Avg., Full Frequency Band (865 - 960 MHz or
921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 700 mA, P
out
=
125 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts
CW Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S9125NR1
MRF6S9125NBR1
865 - 960 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF6S9125NR1 MRF6S9125NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
Symbol
R
θJC
Value
(1,2)
0.44
0.45
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
C (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
LIFETIME BUY
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.74 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
On Characteristics
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.05
2.1
2.89
0.23
3
4
0.3
Vdc
Vdc
Vdc
Dynamic Characteristics
(3)
C
rss
C
oss
—
—
2
60
—
—
pF
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset. PAR
= 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
19
29
—
—
20.2
31
- 47.1
- 16
24
—
- 45
-9
dB
%
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally input matched.
(continued)
MRF6S9125NR1 MRF6S9125NBR1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA,
P
out
= 60 W Avg., 921 - 960 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
40
1.8
- 63
- 78
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 125 W,
921 - 960 MHz
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
P1dB
—
—
—
—
19
62
- 12
125
—
—
—
—
dB
%
dB
W
P
out
@ 1 dB Compression Point, CW
(f = 880 MHz)
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
R1
V
BIAS
+
C10
RF
INPUT
C9
+
C8
+
C7
R2
C6
L1
Z1
C1
C2
C3
C5
Z2
Z3
Z4
Z5
Z6
Z7
C4
Z8
C11
DUT
C12
C13
C14
Z9
Z10
L2
Z11
Z12
Z13
Z14
C18
C19
+
C20
+
C21
+
C22
V
SUPPLY
C23
Z15
Z16
C17
C15
C16
LIFETIME BUY
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.200″
1.060″
0.382″
0.108″
0.200″
0.028″
0.236″
0.050″
0.238″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.420″
x 0.620″
x 0.620″
x 0.620″
x 0.620″
Microstrip
Microstrip
Microstrip
Microstrip
x 0.620″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057″ x 0.620″ Microstrip
0.119″ x 0.620″ Microstrip
0.450″ x 0.220″ Microstrip
0.061″ x 0.220″ Microstrip
0.078″ x 0.220″ Microstrip
0.692″ x 0.080″ Microstrip
0.368″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
20 pF Chip Capacitor
6.2 pF Chip Capacitor
0.8 - 8.0 pF Variable Capacitors, Gigatrim
11 pF Chip Capacitors
0.56
μF,
50 V Chip Capacitors
47
μF,
16 V Tantalum Capacitors
47 pF Chip Capacitors
100
μF,
50 V Electrolytic Capacitor
12 pF Chip Capacitors
5.1 pF Chip Capacitors
0.3 pF Chip Capacitor
39 pF Chip Capacitor
22
μF,
35 V Tantalum Capacitors
470
μF,
63 V Electrolytic Capacitor
7.15 nH Inductor
8.0 nH Inductor
15
Ω,
1/3 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
Part Number
ATC100B200FT500XT
ATC100B6R2BT500XT
27291SL
ATC100B110FT500XT
C1825C564J5RAC
T491D476K016AT
ATC700B470FT500XT
MCHT101M1HB - 1017 - RF
ATC100B120FT500XT
ATC100B5R1BT500XT
ATC700B0R3BT500XT
ATC700B390FT500XT
T491X226K035AT
ESME630ELL471MK25S
1606 - 7J
A03T
CRCW121015R0FKEA
CRCW12065603FKEA
ATC
ATC
Johanson
ATC
Kemet
Kemet
ATC
Multicomp
ATC
ATC
ATC
ATC
Kemet
United Chemi - Con
CoilCraft
CoilCraft
Vishay
Vishay
Manufacturer
C1
C2
C3, C15
C4, C5
C6, C18, C19
C7, C8
C9, C23
C10
C11, C12
C13, C14
C16
C17
C20, C21
C22
L1
L2
R1
R2
MRF6S9125NR1 MRF6S9125NBR1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
RF
Z17 OUTPUT
C8 C7
C9
V
GG
C10
C1
CUT OUT AREA
L1
C2
C5
C3
C6
C19
C20 C21
C22
R2
R1
V
DD
C18
C14
L2
C23
C17
C4
C11
C13
C12
C15
C16
900 MHz
TO272 WB
Rev. 0
Figure 2. MRF6S9125NR1(NBR1) Test Circuit Component Layout
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
测试/测量
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