Freescale Semiconductor
Technical Data
Document Number: MRF6S19120H
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1000 mA, P
out
= 19 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19120HR3
MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19120HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
407
2.3
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
Symbol
R
θJC
Value
(1,2)
0.43
0.45
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S19120HR3 MRF6S19120HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 270
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.7 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.7 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.95
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
—
—
2
2.8
0.21
6.9
3
4
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 19 W Avg. N - CDMA, f = 1990 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
ACPR
IRL
14
20
—
—
15
21.5
- 54
- 13
17
—
- 48
-9
dB
%
dBc
dB
MRF6S19120HR3 MRF6S19120HSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
B1
+
R1
C9
C5
C7
C4
R2
C3
Z6
RF
INPUT
Z1
C1
DUT
Z2
Z3
Z4
Z5
Z7
Z8
Z9
C2
Z10
C6
C8
+
C10
+
C11
+
C12
+
C13
+
C14
V
SUPPLY
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
1.242″
0.839″
0.230″
0.320″
0.093″
0.160″
x 0.084″
x 0.084″
x 0.180″
x 1.100″
x 1.100″
x 1.098″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
PCB
0.387″ x 1.098″ Microstrip
0.169″ x 0.316″ Microstrip
0.781″ x 0.084″ Microstrip
1.228″ x 0.084″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic
Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values
Part
B1
C1, C2
C3, C4
C5, C6
C7, C8
C9
C10, C11
C12, C13
C14
R1
R2
Short RF Bead
10 pF Chip Capacitors
5.1 pF Chip Capacitors
1.0 nF Chip Capacitors
0.1
μF
Chip Capacitors
10
μF,
35 V Tantalum Chip Capacitor
10
μF,
35 V Tantalum Chip Capacitors
22
μF,
50 V Tantalum Chip Capacitors
470
μF,
63 V Electrolytic Capacitor, Radial
560 KW, 1/4 W Chip Resistor (1206)
10
W,
1/4 W Chip Resistor (1206)
Description
Part Number
2743019447
100B100JP50X
100B5R1CP50X
100B102JP50X
C1825C100J5RAC
T491X106K035AS
GRM55DR61H106KA88L
T491C105K022AS
MCR63V470M8X11
CRCW1206560F100
CRCW1206010F100
Manufacturer
Fair - Rite
ATC
ATC
ATC
Kemet
Kemet
Murata
Kemet
Multicomp
Vishay
Vishay
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
3
C9
C4
B1
R2
C3
C11 C10
C13
C6 C8
R1
C5 C7
C12
C14
C1
C2
CUT OUT AREA
MRF6S19120 Rev. 0
Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout
MRF6S19120HR3 MRF6S19120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
−10
−12
−14
−16
−18
−20
−22
−24
−26
η
D
, DRAIN
EFFICIENCY (%)
−10
−12
−14
−16
−18
−20
−22
−24
−26
1500 mA
750 mA
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
15.6
15.4
G
ps
, POWER GAIN (dB)
15.2
15
14.8
IRL
14.6
ACPR
14.4
14.2
ALT1
−55
−60
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 19 W (Avg.), I
DQ
= 1000 mA
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
26
24
22
20
−45
−50
−65
14
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 19 Watts Avg.
15.6
15.4
G
ps
, POWER GAIN (dB)
15.2
15
14.8
14.6
14.4
14.2
ACPR
ALT1
IRL
G
ps
V
DD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1000 mA
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
32
η
D
30
28
26
−35
−40
−45
−50
−55
14
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 32 Watts Avg.
17
I
DQ
= 1500 mA
16
G
ps
, POWER GAIN (dB)
1250 mA
15 1000 mA
750 mA
14
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
V
DD
= 28 Vdc
−25 f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
I
DQ
= 500 mA
−35
−40
−45
−50
1000 mA
−55
0.6
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
1250 mA
13
500 mA
V
DD
= 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
12
0.6
1
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
5
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