Freescale Semiconductor
Technical Data
Document Number: MRF6S21190H
Rev. 1, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1600 mA, P
out
= 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 29%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Output Power
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Designed for Digital Predistortion Error Correction Systems
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21190HR3
MRF6S21190HSR3
2110 - 2170 MHz, 54 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S21190HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S21190HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
- 0.5, +68
- 0.5, +12
32, +0
- 65 to +150
150
200
175
1
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
Symbol
R
θJC
Value
(1,2)
0.29
0.30
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6S21190HR3 MRF6S21190HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 420
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 4.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Equivalent Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
out
C
iss
—
—
—
2.8
185
526
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.12
2
2.8
0.21
3
4
0.31
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 54 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Video Bandwidth @ 175 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 54 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 175 W CW
Average Group Delay @ P
out
= 175 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 175 W CW,
f = 2140 MHz
Gain Variation over Temperature
( - 30°C to +85°C)
1. Part internally matched both on input and output.
G
ps
η
D
PAR
ACPR
IRL
VBW
—
G
F
Φ
Delay
ΔΦ
ΔG
—
—
—
—
—
50
0.16
0.52
2.1
28
0.016
—
—
—
—
—
—
dB
°
ns
°
dB/°C
14.5
26
5.5
—
—
16
29
6.1
- 38
- 13
17.5
—
—
- 35
-8
dB
%
dB
dBc
dB
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, 2110 - 2170 MHz Bandwidth
MRF6S21190HR3 MRF6S21190HSR3
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C8
RF
INPUT
R1
C7
R2
C6
C3
Z7
Z6
Z1
C1
Z2
Z3
Z4
Z5
Z8
DUT
Z9
Z10
Z11
Z12
C2
Z13
C4
C9
C10
+
C11
+
C12
+
C13
V
SUPPLY
RF
OUTPUT
+
C5
C14
C15
C16
+
C17
+
C18
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7, Z8
0.744″
0.632″
0.400″
0.042″
0.322″
0.313″
0.123″
x 0.084″
x 0.084″
x 0.450″
x 0.580″
x 0.580″
x 0.040″
x 0.121″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
PCB
0.145″ x 1.320″ Microstrip
0.508″ x 0.320″ Microstrip
0.429″ x 0.279″ Microstrip
0.322″ x 0.084″ Microstrip
0.735″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S21190HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S21190HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C4, C5
C2
C3
C6
C7, C9, C14
C8
C10, C15
C11, C12, C16, C17
C13, C18
R1
R2
Description
Short Ferrite Bead
8.2 pF Chip Capacitors
47 pF Chip Capacitor
10 pF Chip Capacitor
56 pF Chip Capacitor
0.1
μF
Chip Capacitors
10
μF,
50 V Electrolytic Capacitor
10
μF
Chip Capacitors
22
μF
Tantalum Capacitors
220
μF,
50 V Electrolytic Capacitors
1.0 kΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447
ATC100B8R2JT500XT
ATC100B470JT500XT
ATC100B100JT500XT
ATC100B560JT500XT
CDR33BX104AKYS
EMVY500ADA100MF55G
GRM55DR61H106KA88
T491X226K035AT
EMVY500ADA221MJA0G
CRCW12061001FKEA
CRCW120610R0FKEA
Manufacturer
Fairrite
ATC
ATC
ATC
ATC
Kemet
Nippon Chemi - Con
Murata
Kemet
Nippon Chemi - Con
Vishay
Vishay
MRF6S21190HR3 MRF6S21190HSR3
RF Device Data
Freescale Semiconductor
3
R1
B1
R2
C6
C9 C10
C12
C13
C3
C7
C8
C4
C11
C1
CUT OUT AREA
C2
C17
C5
MRF6S21190H/HS Rev. 0
C14 C15
C16
C18
Figure 2. MRF6S21190HR3(HSR3) Test Circuit Component Layout
MRF6S21190HR3 MRF6S21190HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
18.5
18
17.5
G
ps
, POWER GAIN (dB)
17
16.5
16
15.5
15
14.5
14
13.5
2060
2080
2100
2120
2140
2160
2180
2200
IRL
PARC
G
ps
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
η
D
V
DD
= 28 Vdc, P
out
= 54 W (Avg.), I
DQ
= 1600 mA
34
32
30
28
26
0
PARC (dB)
−0.5
−1
−1.5
−2
−2.5
2220
−4
−8
−12
−16
−20
−24
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 54 Watts Avg.
16.5
G
ps
, POWER GAIN (dB)
16
15.5
15
14.5
14
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 86 W (Avg.), I
DQ
= 1600 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Banwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
40
38
36
34
−2
η
D
, DRAIN
EFFICIENCY (%)
17
42
PARC (dB)
IRL
−5
−10
−15
−20
−25
−2.5
−3
−3.5
2080
2100
2120
2140
2160
2180
2200
−4
2220
13.5 PARC
13
12.5
2060
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 86 Watts Avg.
18
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2400 mA
17
G
ps
, POWER GAIN (dB)
2000 mA
1600 mA
−20
I
DQ
= 800 mA
−30
1200 mA
2400 mA
2000 mA
1600 mA
−50
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
16
−40
15
1200 mA
14
800 mA
13
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21190HR3 MRF6S21190HSR3
RF Device Data
Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
5
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