Freescale Semiconductor
Technical Data
Document Number: MRF19125
Rev. 6, 4/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 26 Volts,
I
DQ
= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR —
- 51 dB
IM3 —
- 37.0 dBc
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19125R3
MRF19125SR3
1930- 1990 MHz, 125 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF191225R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19125SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
330
1.89
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.53
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19125R3 MRF19125SR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
On Characteristics
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 1300 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
5.4
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2
2.5
—
9
—
3.9
0.185
—
4
4.5
0.21
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
1. Part is internally matched both on input and output.
(continued)
G
ps
12
13.5
—
dB
η
19
22
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 47
dBc
IRL
—
- 13
-9
dB
MRF19125R3 MRF19125SR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 125 W PEP, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 125 W PEP, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Third Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 125 W PEP, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 125 W PEP, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 1300 mA, f = 1990 MHz)
G
ps
—
13.5
—
dB
Symbol
Min
Typ
Max
Unit
η
—
35
—
%
IMD
—
- 30
—
dBc
IRL
—
- 13
—
dB
P1dB
—
130
—
W
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
R1
+
R2
C5
C4
C3
C2
C7
B1
R3
V
SUPPLY
+
C8
+
C9
L1
C10
C11
+
C12
+
C13
+
C14
Z4
RF
INPUT
Z8
RF
OUTPUT
Z1
C1
Z2
Z3
DUT
Z5
Z6
C6
Z7
Z1, Z7
Z2
Z3
Z4
Z5
Z6
Z8
0.500″ x 0.084″ Microstrip
1.105″ x 0.084″ Microstrip
0.360″ x 0.895″ Microstrip
0.920″ x 0.048″ Microstrip
0.605″ x 1.195″ Microstrip
0.800″ x 0.084″ Microstrip
0.660″ x 0.095″ Microstrip
Board
PCB
0.030″ Glass Teflon
®
,
Keene GX - 0300- 55- 22,
ε
r
= 2.55
Etched Circuit Boards
MRF19125 Rev. 5, CMR
Figure 1. MRF19125R3(SR3) Test Circuit Schematic
Table 5. MRF19125R3(SR3) Test Circuit Component Designations and Values
Designators
B1
C1
C2, C7
C3, C10
C4, C11
C5
C6
C8
C9, C12, C13, C14
L1
N1, N2
R1
R2
R3
Description
Short Ferrite Bead, Fair Rite #2743019447
51 pF Chip Capacitor, ATC #100B510JCA500X
5.1 pF Chip Capacitors, ATC #100B5R1JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.1
mF
Chip Capacitors, Kemet #CDR33BX104AKWS
0.1
mF
Tantalum Chip Capacitor, Kemet #T491C105M050
10 pF Chip Capacitor, ATC #100B100JCA500X
10
mF
Tantalum Chip Capacitor, Kemet #T491X106K035AS4394
22
mF
Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
1 Turn, #20 AWG, 0.100″ ID
Type N Flange Mounts, Omni Spectra #3052 - 1648- 10
1.0 kΩ, 1/8 W Chip Resistor
220 kΩ, 1/8 W Chip Resistor
10
Ω,
1/8 W Chip Resistor
MRF19125R3 MRF19125SR3
4
RF Device Data
Freescale Semiconductor
C2
R1
B1
R2 C5 C4
C1
C3
CUT OUT
C7
C8
R3
C9
L1
C10
C11
C12 C13 C14
C6
MRF19125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19125R3(SR3) Test Circuit Component Layout
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
5
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