Freescale Semiconductor
Technical Data
Document Number: MRF18060B
Rev. 8, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM 1930 - 1990 MHz.
•
GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060BLR3
MRF18060BLSR3
1930- 1990 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18060BLR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18060BLSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
180
1.03
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.97
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF18060BLR3 MRF18060BLSR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package)
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain @ 60 W
(2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 60 W
(2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1930 - 1990 MHz)
Input Return Loss
(2)
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1930 - 1990 MHz)
G
ps
η
IRL
—
—
- 10
dB
11.5
40
13
45
—
%
—
dB
C
iss
C
oss
C
rss
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
—
3.9
0.27
4
4.5
—
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
6
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring
batch- to - batch consistency.
MRF18060BLR3 MRF18060BLSR3
2
RF Device Data
Freescale Semiconductor
Z5
V
SUPPLY
V
BIAS
R1
R2
C1
R3
RF
INPUT
C9
Z1
C4
Z2
C5
Z3
DUT
C7
Z4
C6
Z6
C8
Z7
C3
+
C2
RF
OUTPUT
C1, C3
C2
C4, C8
C5
C6
C7, C9
R1, R2
R3
10 pF, 100B Chip Capacitors
10
mF,
35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitors
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
0.3 pF, 100B Chip Capacitors
10 kΩ Chip Resistors (0805)
1.0 kΩ Chip Resistor (0805)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
0.60″ x 0.09″ Microstrip
1.00″ x 0.09″ Microstrip
0.51″ x 0.94″ Microstrip
0.59″ x 0.98″ Microstrip
0.79″ x 0.09″ Microstrip
1.38″ x 0.09″ Microstrip
0.79″ x 0.09″ Microstrip
Teflon
®
Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
VBIAS
R1
C1
R2
C9
C4
R3
C6
C5
C2
VSUPPLY
C3
C7
C8
Ground
MRF18060
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
C1
R3
T2
R4
R6
RF
INPUT
C3
MRF18060BLR3 MRF18060BLSR3
4
RF Device Data
Freescale Semiconductor
ÎÎÎ
ÎÎÎ
ÎÎÎ
T1
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
R1
R2
R5
V
SUPPLY
C2
C4
+
C5
Z1
C6
Z2
C7
Z3
Z6
Z4
Z5
C8
Z7
RF
OUTPUT
1
mF
Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU - P (0805)
10
mF,
35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU - P (0805)
1 pF Chip Capacitor, ACCU - P (0805)
10
Ω
Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon
®
Glass,
ε
r
= 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
V
BIAS
Ground
V
SUPPLY
R1
R2
R3
R4
C4
T1
T2
C7
C8
C6
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
5
Î
ÎÎÎ
ÎÎ
Î
Î
Î
ÎÎÎ
ÎÎ
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
Î
R5
C2
C3
R6
MRF18060
C5
C1
Î
ÎÎ
ÎÎÎ
Î
Î
ÎÎ
Î
Î
ÎÎ
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