Freescale Semiconductor
Technical Data
Document Number: MD7P19130H
Rev. 0, 5/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1250 mA, P
out
= 40 Watts Avg., Full Frequency Band, 3GPP Test
Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
w
130 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MD7P19130HR3
MD7P19130HSR3
1930 - 1990 MHz, 40 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465M - 01, STYLE 1
NI - 780 - 4
MD7P19130HR3
CASE 465H - 02, STYLE 1
NI - 780S - 4
MD7P19130HSR3
RF
inA
/V
GSA
3
2 RF
outA
/V
DSA
RF
inB
/V
GSB
4
1 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MD7P19130HR3 MD7P19130HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 40 W CW
Symbol
R
θJC
Value
(1,2)
0.31
0.36
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(3)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(3)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 316
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1250 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.16 Adc)
Dynamic Characteristics
(3,4)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.2
586
348
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
1.9
0.1
2
2.7
0.2
2.7
3.4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1250 mA, P
out
= 40 W Avg., f = 1932.5 MHz and f =
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
18.5
27
5.6
—
—
20
30
6
- 36
- 16
21.5
—
—
- 32.5
-7
dB
%
dB
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Measurement made with device in single - ended configuration.
4. Part internally matched both on input and output.
(continued)
MD7P19130HR3 MD7P19130HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
W
dB
°
ns
°
dB/°C
dBm/°C
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1250 mA, 1930 - 1990 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P1dB
—
130
—
Gain Flatness in 60 MHz Bandwidth @ P
out
= 40 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 130 W CW
Average Group Delay @ P
out
= 130 W CW, f = 1960 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 130 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.3
0.5
2.3
80
0.016
0.01
—
—
—
—
—
—
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
+
C1
+
C2
C3
C4
R1
C6
Z14
Z11
Z7
RF
INPUT
Z8
Z9
Z10
Z12
Z19
Z1
Z2
Z3
C5
Z4
Z5
Z6
DUT
C9
Z20
Z21
Z22
Z23
Z13
Z15
Z16
Z17
Z18
C7
+
C8
+
C10
C11
V
SUPPLY
C12
Z24
Z25
Z26
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
0.582″ x 0.110″ Microstrip
0.140″ x 0.284″ Microstrip
0.066″ x 0.080″ Microstrip
0.127″ x 0.080″ Microstrip
0.042″ x 0.237″ Microstrip
0.095″ x 0.375″ Microstrip
0.330″ x 0.320″ Microstrip
0.438″ x 0.530″ Microstrip
0.311″ x 0.741″ Microstrip
0.025″ x 0.814″ Microstrip
0.049″ x 0.254″ Microstrip
0.078″ x 0.814″ Microstrip
0.134″ x 0.957″ Microstrip
0.150″ x 0.276″ Microstrip
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26
PCB
0.203″ x 0.957″ Microstrip
0.271″ x 0.930″ Microstrip
0.010″ x 0.540″ Microstrip
0.042″ x 0.205″ Microstrip
0.471″ x 0.080″ Microstrip
0.024″ x 0.241″ Microstrip
0.057″ x 0.349″ Microstrip
0.781″ x 0.311″ Microstrip
0.271″ x 0.080″ Microstrip
0.024″ x 0.095″ Microstrip
0.134″ x 0.190″ Microstrip
0.511″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 2. MD7P19130HR3(HSR3) Test Circuit Schematic
Table 5. MD7P19130HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4, C12
C5, C9
C6
C7
C8
C10
C11
R1
Description
Short Ferrite Bead
47
μF,
50 V Electrolytic Capacitor
100
μF,
50 V Electrolitic Capacitor
1.0
μF
Chip Capacitor
0.1
μF
Chip Capacitors
11 pF Chip Capacitors
13 pF Chip Capacitor
8.2 pF Chip Capacitor
22
μF,
35 V Tantalum Capacitor
470
μF,
63 V Electrolytic Capacitor
10
μF,
50 V Chip Capacitor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447 ROP50
476KXM063M
T491C105K050AT
ATC100B102JT50XT
CDR33BX104AKYS
ATC100B110JT500XT
ATC100B130JT500XT
ATC100B8R2JT500XT
T491C226K035AT
477KXM063M
GRM55DR61H106KA88B
CRCW120610R0FKEA
Manufacturer
Fair - Rite
Illinois Cap.
Kemet
ATC
Kemet
ATC
ATC
ATC
Kemet
Illinois Cap.
Murata
Vishay
MD7P19130HR3 MD7P19130HSR3
4
RF Device Data
Freescale Semiconductor
C2
C10
C3 C4
R1
B1
C6
C7
C12
C11
C1
C8
C5
CUT OUT AREA
C9
MD7P19130H/HS
Rev. 2
Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout
Single−ended
l
4
l
4
Quadrature combined
l
4
Doherty
l
2
l
2
Push−pull
Figure 4.
Possible Circuit Topologies
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
5
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