®
TDE1897C
TDE1898C
0.5A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO V
S
- 45V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTION
The TDE1897C/TDE1898C is a monolithic Intelli-
gent Power Switch in Multipower BCD Technol-
BLOCK DIAGRAM
MULTIPOWER BCD TECHNOLOGY
Minidip
SIP9
ORDERING NUMBERS:
SO20
TDE1897CDP
TDE1898CDP
TDE1898CSP
TDE1897CFP
TDE1898CFP
ogy, for driving inductive or resistive loads. An in-
ternal Clamping Diode enables the fast demag-
netization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher-
ently indistructible and suitable for general pur-
pose industrial applications.
September 2003
1/12
TDE1897C - TDE1898C
PIN CONNECTIONS
(Top view)
Minidip
SO20
SIP9
ABSOLUTE MAXIMUM RATINGS
(Minidip pin reference)
Symbol
V
S
V
S
– V
O
V
i
V
i
I
i
I
O
E
l
P
tot
T
op
T
stg
Parameter
Supply Voltage (Pins 3 - 1) (T
W
< 10ms)
Supply to Output Differential Voltage. See also V
Cl
3-2 (Pins 3 - 2)
Input Voltage (Pins 7/8)
Differential Input Voltage (Pins 7 - 8)
Input Current (Pins 7/8)
Output Current (Pins 2 - 1). See also ISC
Energy from Inductive Load (T
J
= 85°C)
Power Dissipation. See also THERMAL CHARACTERISTICS.
Operating Temperature Range (T
amb
)
Storage Temperature
Value
50
internally limited
-10 to V
S
+10
43
20
internally limited
200
internally limited
-25 to +85
-55 to 150
Unit
V
V
V
V
mA
A
mJ
W
°C
°C
THERMAL DATA
Symbol
R
th j-case
R
th j-amb
Description
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Minidip
100
Sip
10
70
SO20
90
Unit
°C/W
°C/W
2/12
TDE1897C - TDE1898C
ELECTRICAL CHARACTERISTICS
(V
S
= 24V; T
amb
= –25 to +85°C, unless otherwise specified)
Symbol
V
smin
3
V
s
3
I
q
3
V
sth1
V
sth2
3
V
shys
I
sc
V
don
3-2
I
oslk
2
V
ol
2
V
cl
3-2
I
old
2
V
id
7-8
I
ib
7-8
V
ith
7-8
V
iths
7-8
R
id
7-8
I
ilk
7-8
Parameter
Supply Voltage for Valid
Diagnostics
Supply Voltage (operative)
Quiescent Current
I
out
= I
os
= 0
Undervoltage Threshold 1
Undervoltage Threshold 2
Supply Voltage Hysteresis
Short Circuit Current
Output Voltage Drop
Output Leakage Current
Low State Out Voltage
Internal Voltage Clamp (V
S
- V
O
)
Open Load Detection Current
Common Mode Input Voltage
Range (Operative)
Input Bias Current
Input Threshold Voltage
Input Threshold Hysteresis
Voltage
Diff. Input Resistance
Input Offset Current
V
il
V
ih
(See fig. 1); T
amb
= 0 to +85°C
(See fig. 1); Tamb = 0 to +85°C
(See fig. 1); T
amb
= 0 to +85°C
V
S
= 18 to 35V; R
L
= 1Ω
@ I
out
= 625mA; T
j
= 25°C
@ I
out
= 625mA; T
j
= 125°C
@ V
i
= V
il
, V
o
= 0V
@ V
i
= V
il
; R
L
=
∞
@ I
O
= -500mA
V
i
= V
ih
; T
amb
= 0 to +85°C
V
S
= 18 to 35V,
V
S
= V
id
7-8 < 37V
V
i
= –7 to 15V; –In = 0V
V+In > V–In
V+In > V–In
@ 0 < +In < +16V; –In = 0V
@ –7 < +In < 0V; –In = 0V
V+In = V–In
0V < V
i
<5.5V
–In = GND
0V < V+In <5.5V
+In = GND
0V < V–In <5.5V
V
oth1
2
V
oth2
2
V
ohys
2
I
osd
4
V
osd
3-4
I
oslk
4
V
dgl
5/6
I
dglk
5/6
V
fdg
5/6-3
Output Status Threshold 1
Voltage
Output Status Threshold 2
Voltage
Output Status Threshold
Hysteresis
Output Status Source Current
Active Output Status Driver
Drop Voltage
Output Status Driver Leakage
Current
Diagnostic Drop Voltage
Diagnostic Leakage Current
Clamping Diodes at the
Diagnostic Outputs.
Voltage Drop to V
S
(See fig. 1)
(See fig. 1)
(See fig. 1)
V
out
> V
oth1
, V
os
= 2.5V
V
s
– V
os
@ I
os
= 2mA;
T
amb
= -25 to 85°C
V
out
< V
oth2
, V
os
= 0V
V
S
= 18 to 35V
D1 / D2 = L @ I
diag
= 0.5mA
D1 / D2 = L @ I
diag
= 3mA
D1 / D2 =H @ 0 < V
dg
< V
s
V
S
= 15.6 to 35V
@ I
diag
= 5mA; D1 / D2 = H
9
0.3
2
0.7
2
4
5
25
250
1.5
25
2
+Ii
–Ii
+Ii
–Ii
+Ii
–Ii
–20
–75
–250
–100
–50
45
1
–7
–700
0.8
50
400
150
+20
–25
+10
–125
–30
–15
12
+50
0.8
11
0.4
0.75
250
400
1
15.5
3
1.5
425
600
300
1.5
55
6
15
700
2
400
Test Condition
I
diag
> 0.5mA @ V
dg1
= 1.5V
Min.
9
18
24
2.5
4.5
Typ.
Max.
35
35
4
7.5
Unit
V
V
mA
mA
V
V
V
A
mV
mV
µA
V
V
mA
V
µA
V
mV
KΩ
KΩ
µA
µA
µA
µA
µA
µA
V
V
V
mA
V
µA
mV
V
µA
V
1.4
Note
Vil < 0.8V, Vih > 2V @ (V+In > V–In);
All test not dissipative.
Minidip pin reference.
3/12
TDE1897C - TDE1898C
SOURCE DRAIN NDMOS DIODE
Symbol
V
fsd
2-3
I
fp
2-3
t
rr
2-3
t
fr
2-3
Parameter
Forward On Voltage
Forward Peak Current
Reverse Recovery Time
Forward Recovery Time
Test Condition
@ I
fsd
= 625mA
t = 10ms; d = 20%
I
f
= 625mA di/dt = 25A/µs
200
50
Min.
Typ.
1
Max.
1.5
2
Unit
V
A
ns
ns
THERMAL CHARACTERISTICS (*)
Θ
Lim
T
H
Junction Temp. Protect.
Thermal Hysteresis
135
150
30
°C
°C
SWITCHING CHARACTERISTICS
(V
S
= 24V; R
L
= 48Ω) (*)
t
on
t
off
t
d
Turn on Delay Time
Turn off Delay Time
Input Switching to Diagnostic
Valid
(*) Not tested.
100
20
100
µs
µs
µs
Note
Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.
Figure 1
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions
Normal Operation
Open Load Condition (I
o
< I
old
)
Short to V
S
Short Circuit to Ground (I
O
= I
SC
)
(**)
TDE1897C
TDE1898C
Output DMOS Open
Overtemperature
Supply Undervoltage (V
S
< V
sth1
in the falling phase of the sup-
ply voltage; V
S
< V
sth2
in the rising phase of the supply voltage)
Input
L
H
L
H
L
H
H
H
L
H
L
H
L
H
Output
L
H
L
H
H
H
<H (*)
H
L
L
L
L
L
L
L
Diag1
H
H
H
L
L
L
H
H
H
H
L
H
H
L
L
Diag2
H
H
H
H
H
H
L
H
H
H
H
L
L
L
L
(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
4/12
TDE1897C - TDE1898C
APPLICATION INFORMATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(V
cl
), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
T
j
= 85°C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W
=
V
cl
V
cl
– V
s
V
s
L
log
1
+
]
[
I
o
–
R
L
V
cl
– V
s
R
L
Figure 3:
Demagnetization Cycle Waveforms
Where:
V
cl
= clamp voltage;
L = inductive load;
R
L
= resistive load;
Vs = supply voltage;
I
O
= I
LOAD
3) In normal conditions the operating Junction
temperature should remain below 125°C.
Figure 2:
Inductive Load Equivalent Circuit
Figure 4:
Normalized R
DSON
vs. Junction
Temperature
D93IN018
α
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-25
0
25
50
75
100
125
Tj (˚C)
α=
RDSON (Tj)
RDSON (Tj=25˚C)
5/12
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