Freescale Semiconductor
Technical Data
MRF9100
Rev. 3, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large−signal, common source amplifier applica-
tions in 26 volt base station equipment.
•
On−Die Integrated Input Match
•
Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts (Typ)
Power Gain @ P1dB — 16.5 dB (Typ)
Efficiency @ P1dB — 53% (Typ)
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts (CW) Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large−Signal Impedance Parameters
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9100R3
MRF9100SR3
GSM/EDGE 900 MHz, 110 W, 26 V
LATERAL N−CHANNEL
RF POWER MOSFETs
CASE 465−06, STYLE 1
NI−780
MRF9100R3
CASE 465A−06, STYLE
NI−780S
MRF9100SR3
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
−
0.5. +65
−
0.5. +15
175
1.0
−65
to +200
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.0
Unit
°C/W
NOTE
−
CAUTION
−
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF9100R3 MRF9100SR3
5−1
Freescale Semiconductor
Wireless RF Product Device Data
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain−Source Breakdown Voltage
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate−Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 500
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 800 mAdc)
Drain−Source On−Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
—
—
0.19
8
4
5
0.5
—
Vdc
Vdc
Vdc
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.0
—
pF
Functional Tests
(In Freescale Test Fixture)
Output Power, 1 dB Compression Point, CW
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 960 MHz)
Common−Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f = 960 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f = 960 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f1 = 921 MHz and 960 MHz,
f2 = 940 MHz)
Third Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 100 W PEP, I
DQ
= 800 mA,
f = Full GSM Band 921−960 MHz, Tone Spacing = 100 kHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, I
DQ
= 800 mA, P
out
= 100 W CW,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of
Tests)
1. Part is internally matched both on input and output.
P
1dB
G
ps
100
16
110
17
—
—
W
dB
η
47
51
—
%
IRL
—
—
IMD
—
—
−20
−30
−10
—
—
dB
dBc
Ψ
No Degradation In Output Power
Before and After Test
MRF9100R3 MRF9100SR3
2
Freescale Semiconductor
Wireless RF Product Device Data
C14
R1
R2
RF
INPUT
+
C8
R3
Z1
C1
Z2
C2
Z3
C3
Z4
Z5
C5
Z6
C4
DUT
C7
C10
Z7
C9
Z8
Z13
Z9
V
DD
RF
OUTPUT
V
GG
C15
C6
C11
Z10
Z11
C12
C13
Z12
Figure 1. MRF9100 Test Circuit Schematic
Table 5. MRF9100 Test Circuit Component Designations and Values
Designators
C1, C13
C2, C12
C3
C4, C5
C6, C14
C7, C8, C9, C10
C11
C15
R1, R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Substrate
Description
22 pF, 100B Chip Capacitors, ATC #100B220GW
2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW
6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW
10 pF, 100B Chip Capacitors, ATC #100B100GW
33 pF, 100B Chip Capacitors, ATC #100B330JW
4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW
2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW
10
µF,
35 V Tantalum Chip Capacitor, Vishay−Sprague #293D106X9035D
10 kW, 1/8 W Chip Resistors (0805)
1 kW, 1/8 W Chip Resistor (0805)
0.495″ x 0.087″ Microstrip
0.657″ x 0.087″ Microstrip
0.324″ x 0.087″ Microstrip
0.429″ x 0.087″ Microstrip
0.250″ x 0.790″ Microstrip
0.535″ x 0.790″ Microstrip
0.312″ x 0.790″ Microstrip
0.409″ x 0.790″ Microstrip
0.432″ x 0.087″ Microstrip
0.220″ x 0.087″ Microstrip
0.828″ x 0.087″ Microstrip
0.485″ x 0.087″ Microstrip
1.602″ x 0.087″ Microstrip
Taconic TLX8, Thickness 0.8 mm
MRF9100R3 MRF9100SR3
Freescale Semiconductor
Wireless RF Product Device Data
3
R1
R2
C7
C6
C1
C2
C3
R3 C4
WP
C5
C8
C9
WP
C10
C14
C15
C11
C12
C13
MRF9100
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF9100 Test Circuit Component Layout
MRF9100R3 MRF9100SR3
4
Freescale Semiconductor
Wireless RF Product Device Data
+
C3
R1
C1
+
C13
V
GG
U1
1
R2
P1
R3
T1
R4
R5
C5
+
C14
+
C4
V
DD
R6
C2
Z6
C9
RF
INPUT
Z7
Z1
C6
Z2
C7
Z4
Z3
C8
Z5
C10
Z8
Z9
Z10
C11
Z11
Z12
C12
Z13
RF
OUTPUT
Figure 3. MRF9100 Demo Board Schematic
MRF9100R3 MRF9100SR3
Freescale Semiconductor
Wireless RF Product Device Data
5
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