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TELEPHONE: (973) 376-2922
(212)227-6006
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJH11017, MJH11019,
MJH11021 (PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — HFE = 400 Min (All Types)
• Collector-Emitter Sustaining Voltage
VCEO(SUS) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector-Emitter Saturation Voltage
VcE(sat) = 1.2 V (Typ) @ Ic = 5.0 A
= l,8V(Typ)@I
c
= 10 A
• Monolithic Construction
• Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
Collector-Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25 °C
Operating and Storage Junction Temperature
Range
- Continuous
-Peak (Note 1)
Symbol
VCEO
150
200
250
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150-250 VOLTS, 150 WATTS
NPN
PNP
COLLECTOR 2
COLLECTOR
2
BASE
1
EMITTER 3
MJH11018
MJH11020
MJH11022
EMITTER 3
MJH11017
MJH11019
MJH11021
Max
Unit
Vdc
VCB
Vdc
150
200
250
5.0
Vdc
Adc
(TO-218)
VEB
lc
IB
PD
Tj, T
st
g
15
30
0.5
TO-247
Adc
150
1.2
-65 to
+ 150
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Symbol
Max
Unit
0.83
°C/W
RBJC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T
c
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(l
c
= 0,1 Adc, IB = 0)
V
CEO(sus)
Symbol
Min
Max
Unit
Vdc
150
200
250
~
_
-
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
Collector Cutoff Current
(V
CE
= 75Vdc, I
B
= 0)
(V
CE
= 100 Vdc, I
B
= 0)
(V
CE
= 1 25 Vdc, IB = 0)
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE
(off)
=
1 -5 Vdc)
(V
CE
= Rated VCB, V
BE
(off) = 1 .5 Vdc, Tj = 1 50°C)
Emitter Cutoff Current (V
BE
= 5.0 Vdc l
c
= 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(l
c
= 10Adc, V
CE
= 5.0Vdc)
(l
c
= 15 Adc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(l
c
= 10 Adc, I
B
= 100mA)
(l
c
= 15 Adc, I
B
= 150mA)
Base-Emitter On Voltage (l
c
= 10 A, V
CE
= 5.0 Vdc)
Base-Emitter Saturation Voltage (lc = 15 Adc, IB = 150 mA)
DYNAMIC CHARACTERISTICS
'CEO
_
_
-
'CEV
_
-
0.5
5.0
2.0
1.0
1.0
1.0
mAdc
mAdc
IEBO
-
mAdc
HFE
400
100
V
CE(sat)
"~
15,000
Vdc
-
2.5
4.0
2.8
3.8
VBE(OR)
V
BE(sat)
-
-
Vdc
Vdc
-
PF
-
Current-Gain Bandwidth Product (l
c
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
fr
C
0
b
hfe
3.0
-
75
-
400
600
-
Small-Signal Current Gain (l
c
= 10 Adc, V
CE
= 3.0 Vdc, f = 1 .0 kHz)
SWITCHING CHARACTERISTICS
Typical
Characteristic
Delay Time
Rise Time
Storage Time
Fall Time
(V
cc
= 100 V, l
c
= 10 A, I
B
= 100 mA
V
B
E(off) = 5-0 V) (See Figure 2)
Symbol
NPN
150
1.2
4.4
2.5
PNP
75
0.5
2.7
2.5
Unit
ns
us
|S
1
td
tr
ts
tf
US
嵌入式系统
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