FD6M045N06 60V/60A Synchronous Rectifier Module
March 2008
FD6M045N06
60V/60A Synchronous Rectifier Module
General Features
• Very High Rectification Efficiency at Output 12V
• Integrated Solution for Saving Board Space
• RoHS Compliant
Power-SPM
TM
tm
General Description
The FD6M045N06 is one product in the Power-SPM
TM
family
that Fairchild has newly developed and designed to be most
suitable for more compact and more efficient synchronous recti-
fication applications such as internet server power supplies and
telecom system power supplies. For higher efficiency, it includes
built-in very low R
DS(ON)
MOSFETs. This Power-SPM device
can be used in the secondary side of the PWM transformer of
forward/bridge converter to provide high current rectification at
output voltages ranging from 12 Volts down to 5 Volts. With this
product, it is possible to design the secondary side of power
supply systems with reduced parasitic elements resulting in
minimized voltage spike and EMI noise.
MOSFET Features
• V
DSS
= 60V
• Q
G(TOTAL)
= 66nC(Typ.), V
GS
= 10V
• R
DS(ON)
= 3.6mΩ(Typ.), V
GS
= 10V, I
D
= 40A
• Low Miller Charge
• Low Q
rr
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Fully Isolated Package
Applications
• High Current Isolated Converter
• Distributed Power Architectures
• Synchronous Rectification
• DC/DC Converter
• Battery Supplied Application
• ORing MOSFET
1
15
EPM15 Package
Block Diagram
10
G2
D2
9
15
8
Q2
G1
14
13
S2
6
12
7
Q1
11
D1
S1
1
2
3
4
5
Figure 1. FD6M045N06 Module Block Diagram
©2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FD6M045N06 Rev. A1
FD6M045N06 60V/60A Synchronous Rectifier Module
Pin Configuration and Pin Description
Top View
D1
S1
G1
NC
NC
NC
G2
S2
D2
Figure 2. Pinmap of FD6M045N06
Pin Number
1
2~5
6
7
8
9
10
11 ~ 14
15
Pin Name
D1
S1
G1
NC
NC
NC
G2
S2
D2
Pin Description
Drain of Q1, MOSFET
Source of Q1, MOSFET
Gate of Q1, MOSFET
No Connection
No Connection
No Connection
Gate of Q2, MOSFET
Source of Q2, MOSFET
Drain of Q2, MOSFET
Absolute Maximum Ratings
T
C
= 25°C,
Symbol
V
DS
V
GS
I
D
E
AS
T
J,
T
STG
Drain to Source Voltage
Gate to Source Voltage
Unless Otherwise Specified
Rating
(Note1)
Parameter
Unit
V
V
A
mJ
°C
60
±20
Drain Current, Continuous (V
GS
= 10V)
Single Pulse Avalanche Energy
Operating and Storage Temperature Range
(Note1)
(Note1,2)
60
794
-40 ~ 150
Thermal Resistance
Symbol
R
θJC
Note:
1. Each MOSFET Switch
2. Starting T
J
= 25°C, V
D
= 40V, L = 0.25mH, I
AS
= 46A
Parameter
Junction to Case Thermal Resistance
(Note1)
Min.
-
Typ.
-
Max.
3.9
Unit
°C/W
FD6M045N06 Rev. A1
2
www.fairchildsemi.com
FD6M045N06 60V/60A Synchronous Rectifier Module
Electrical Characteristics
T
C
= 25°C, Unless Otherwise Specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Synchronous Rectifier Switch Part
(Each Switch)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Drain to Source On Resistance
I
D
= 250μA, V
GS
= 0V
V
GS
= 0V, V
DS
= 48V
V
GS
=
±20V
V
D
= 20V, I
DS
= 250μA
I
D
= 40A, V
GS
= 10V
T
J
= 150°C
60
-
-
2.0
-
-
-
-
-
-
3.55
6.7
-
1
±100
4.0
4.5
-
V
μA
nA
V
mΩ
Dynamic Charateristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “MIller” Charge
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 40A
I
g
= 1.0mA
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
-
-
3890
755
270
66
7
18
11
20
-
-
-
87
10
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Charateristics (V
GS
= 10V)
t
ON
t
d(on)
t
r
t
d(off)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
I
D
= 40A
V
GS
= 10V, V
DD
= 40V, R
G
= 5Ω
-
-
-
-
-
-
-
18
19
35
23
-
60
-
-
-
-
100
ns
ns
ns
ns
ns
ns
Drain-Source Diode Charateristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
I
SD
= 80A, V
GS
= 0V
I
SD
= 40A, V
GS
= 0V
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 40A, dI
SD
/dt = 100A/μs
I
SD
= 40A, dI
SD
/dt = 100A/μs
-
-
-
-
-
-
33
34
1.25
1.0
-
-
V
ns
nC
FD6M045N06 Rev. A1
3
www.fairchildsemi.com
FD6M045N06 60V/60A Synchronous Rectifier Module
Typical Performance Characteristics
Each Switch, Unless Otherwise Specified
Figure 3. On-Region Characteristics
120
V
GS
10.0 V
8.0 V
7.0 V
6.0 V
Bottom : 5.0 V
Top :
I
D
V
DS
I
D
, Drain Current[A]
80
D
V
GS
G
40
*Notes :
1. 250
μ
s Pulse Test
o
2. T
C
= 25 C
V
DS
V
GS,STEP
FD6M045N06
S
1.5
0
0.0
0.5
1.0
V
DS
, Drain-Source Voltage[V]
Figure 4. Transfer Characteristics
160
I
D
V
DS
I
D
, Drain Current[A]
D
V
GS
120
150 C
o
80
G
V
GS
25 C
-40 C
o
o
V
DS
40
FD6M045N06
S
0
3.0
3.5
4.0
4.5
*Notes :
1. V
DS
= 15V
2. 250
μ
s Pulse Test
5.0
5.5
6.0
V
GS
, Input Voltage[V]
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
I
S
, Reverse Drain Current [A]
Figure 6. Output Capacitance Characteristics
8
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
6
Capacitance [nF]
150 C
o
25 C
o
C
iss
10
4
C
oss
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
*Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
2
C
rss
1
0.4
0.6
0.8
1.0
V
SD
, Body Diode Forward Voltage [V]
0
0.1
1
10
60
V
DS
, Drain-Source Voltage [V]
FD6M045N06 Rev. A1
4
www.fairchildsemi.com
FD6M045N06 60V/60A Synchronous Rectifier Module
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.20
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
* Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T
J
, Junction Temperature [
°
C]
200
* Notes :
1. V
GS
= 10 V
2. I
D
= 40 A
1.10
1.00
0.90
0.85
-50
0
50
100
150
200
T
J
, Junction Temperature [
°
C]
Figure 9. Transient Thermal Response Curve
10
Thermal Response [Z
θ
JC
]
0.5
1
0.2
0.1
0.05
0.1
P
DM
t
1
t
2
0.02
0.01
*Notes:
0.01
Single pulse
1. Z
θ
JC
(t) = 3.9 C/W Typ.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
-4
o
0.001
-5
10
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
200
100
1ms
Figure 11. Unclamped Inductive Switching
Capability
400
If R = 0
t
AV
= (L)(I
AS
)/(1.3*Rated BV
DSS
- V
DD
)
If R ? 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*Rated BV
DSS
- V
DD
) + 1]
100
μ
s
10ms
10
DC
Operation in This Area
is Limited by R
DS(on)
I
AS
, Avalanche Current [A]
I
D
, Drain Current [A]
100
Starting T
J
= 25 C
o
10
Starting T
J
= 125 C
o
1
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
0.1
0.1
1
10
V
DS
, Drain-Source Voltage [V]
100
1
0.01
0.1
1
10
100
1000
t
AV
, Time In Avalanche [ms]
FD6M045N06 Rev. A1
5
www.fairchildsemi.com
机器人开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
